Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target

Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

(112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target.

Original languageEnglish
Pages (from-to)22-24
Number of pages3
JournalJournal of Crystal Growth
Volume363
DOIs
Publication statusPublished - 2013
Externally publishedYes

Fingerprint

Reactive sputtering
Film growth
Magnetron sputtering
Oxides
magnetron sputtering
Metals
Ions
Crystal orientation
Glass
oxides
glass
Substrates
oxygen ions
metals
Oxygen
Shear waves
Acoustic waves
Fluxes
Crystalline materials
S waves

Keywords

  • A1. X-ray diffraction
  • A3. Physical vapor deposition processes
  • B1. Zinc compounds
  • B2. Piezoelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

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title = "Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target",
abstract = "(112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target.",
keywords = "A1. X-ray diffraction, A3. Physical vapor deposition processes, B1. Zinc compounds, B2. Piezoelectric materials",
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T1 - Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target

AU - Takayanagi, Shinji

AU - Yanagitani, Takahiko

AU - Matsukawa, Mami

PY - 2013

Y1 - 2013

N2 - (112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target.

AB - (112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target.

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