Effect of multiple-step annealing on the formation of semiconducting β-FeSi2 and metallic α-Fe2Si5 on Si (100) by ion beam synthesis

Hiroshi Katsumata, Yunosuke Makita, Naoto Kobayashi, Hajime Shibata, Masataka Hasegawa, Shin Ichiro Uekusa

Research output: Contribution to journalArticle

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Abstract

Polycrystalline semiconducting β-FeSi2 layers on Si (100) have been formed by ion beam synthesis. Results from two different annealing processes, either two-step (2SA) annealing up to 900°C or three-step annealing (3SA) up to 1100°C, are discussed. β-FeSi2 grown by 3SA has shown a typical direct band-gap energy (Edir g) of 0.88 eV and a high localized defect density (N0) of 1.0 × 1018 cm-3, the latter being due to crystallographic mismatches or relevant defects at grain boundaries introduced during the transformation process from β to α. On the contrary, β-FeSi2 grown by 2 SA has shown a lower Edir g of 0.80 eV and a smaller N0 of 1.7 × 1017 cm-3, the former arising from a deviation of the stoichiometric composition to the Si-rich side. Broad PL bands near 0.8 eV have been observed at 2 K from both 2SA and 3SA samples, and we assign these PL bands to optical radiative transitions intrinsic to β-FeSi2.

Original languageEnglish
Pages (from-to)2802-2812
Number of pages11
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number5 A
Publication statusPublished - 1997 May
Externally publishedYes

Fingerprint

Ion beams
ion beams
Annealing
annealing
synthesis
Defect density
defects
Grain boundaries
Energy gap
grain boundaries
deviation
Defects
Chemical analysis

Keywords

  • β-FeSi
  • Ion beam synthesis
  • Optical absorption
  • Photoluminescence
  • Raman scattering
  • Rutherford backscattering spectrometry
  • Two-step annealing
  • X-ray diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Effect of multiple-step annealing on the formation of semiconducting β-FeSi2 and metallic α-Fe2Si5 on Si (100) by ion beam synthesis. / Katsumata, Hiroshi; Makita, Yunosuke; Kobayashi, Naoto; Shibata, Hajime; Hasegawa, Masataka; Uekusa, Shin Ichiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 5 A, 05.1997, p. 2802-2812.

Research output: Contribution to journalArticle

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T1 - Effect of multiple-step annealing on the formation of semiconducting β-FeSi2 and metallic α-Fe2Si5 on Si (100) by ion beam synthesis

AU - Katsumata, Hiroshi

AU - Makita, Yunosuke

AU - Kobayashi, Naoto

AU - Shibata, Hajime

AU - Hasegawa, Masataka

AU - Uekusa, Shin Ichiro

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AB - Polycrystalline semiconducting β-FeSi2 layers on Si (100) have been formed by ion beam synthesis. Results from two different annealing processes, either two-step (2SA) annealing up to 900°C or three-step annealing (3SA) up to 1100°C, are discussed. β-FeSi2 grown by 3SA has shown a typical direct band-gap energy (Edir g) of 0.88 eV and a high localized defect density (N0) of 1.0 × 1018 cm-3, the latter being due to crystallographic mismatches or relevant defects at grain boundaries introduced during the transformation process from β to α. On the contrary, β-FeSi2 grown by 2 SA has shown a lower Edir g of 0.80 eV and a smaller N0 of 1.7 × 1017 cm-3, the former arising from a deviation of the stoichiometric composition to the Si-rich side. Broad PL bands near 0.8 eV have been observed at 2 K from both 2SA and 3SA samples, and we assign these PL bands to optical radiative transitions intrinsic to β-FeSi2.

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