Effect of organosilane underlayers on the effectiveness of NiB barrier layers in ULSI metallization

Masahiro Yoshino; Hitoshi Aramaki; Itsuaki Matsuda; Yutaka Okinaka; Tetsuya Osaka

doi:10.1149/1.3072778

Effect of organosilane underlayers on the effectiveness of NiB barrier layers in ULSI metallization

Masahiro Yoshino, Hitoshi Aramaki, Itsuaki Matsuda, Yutaka Okinaka, Tetsuya Osaka

Research Organization for Nano & Life Innovation

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A process was developed for producing a barrier layer of NiB by means of electroless deposition on an underlayer of Pd-activated organosilane monolayer formed on the insulator. An attempt was made to decrease the thickness of the NiB layer without adversely affecting its barrier property to make it compatible with further miniaturized ultralarge-scale integration (ULSI) devices of the future. This aim was achieved by using 3-[2-(2-aminoethylamino)ethylamino] propyltrimethoxysilane (TAS) as the underlayer between the NiB layer and the substrate. By using TAS instead of 3-aminopropyltriethoxysilane (APTES) which was used in our previous study, the minimum acceptable thickness of the NiB barrier layer was successfully reduced to 6 nm. The copper deposit formed on the barrier layer in trenches was free of defects, and it was stable even after annealing at 400°C for 30 min.

Original language	English
Pages (from-to)	D19-D21
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1149/1.3072778
Publication status	Published - 2009 Feb 24

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "A process was developed for producing a barrier layer of NiB by means of electroless deposition on an underlayer of Pd-activated organosilane monolayer formed on the insulator. An attempt was made to decrease the thickness of the NiB layer without adversely affecting its barrier property to make it compatible with further miniaturized ultralarge-scale integration (ULSI) devices of the future. This aim was achieved by using 3-[2-(2-aminoethylamino)ethylamino] propyltrimethoxysilane (TAS) as the underlayer between the NiB layer and the substrate. By using TAS instead of 3-aminopropyltriethoxysilane (APTES) which was used in our previous study, the minimum acceptable thickness of the NiB barrier layer was successfully reduced to 6 nm. The copper deposit formed on the barrier layer in trenches was free of defects, and it was stable even after annealing at 400°C for 30 min.",

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AU - Yoshino, Masahiro

AU - Aramaki, Hitoshi

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AU - Okinaka, Yutaka

AU - Osaka, Tetsuya

PY - 2009/2/24

Y1 - 2009/2/24

N2 - A process was developed for producing a barrier layer of NiB by means of electroless deposition on an underlayer of Pd-activated organosilane monolayer formed on the insulator. An attempt was made to decrease the thickness of the NiB layer without adversely affecting its barrier property to make it compatible with further miniaturized ultralarge-scale integration (ULSI) devices of the future. This aim was achieved by using 3-[2-(2-aminoethylamino)ethylamino] propyltrimethoxysilane (TAS) as the underlayer between the NiB layer and the substrate. By using TAS instead of 3-aminopropyltriethoxysilane (APTES) which was used in our previous study, the minimum acceptable thickness of the NiB barrier layer was successfully reduced to 6 nm. The copper deposit formed on the barrier layer in trenches was free of defects, and it was stable even after annealing at 400°C for 30 min.

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Effect of organosilane underlayers on the effectiveness of NiB barrier layers in ULSI metallization

Abstract

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