Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer

Nao Takano, Naohiro Hosoda, Taro Yamada, Tetsuya Osaka

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The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.

Original languageEnglish
Pages (from-to)3743-3749
Number of pages7
JournalElectrochimica Acta
Issue number21
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1999 2nd International Symposium on Electrochemical Microsystems Technologies - Electrochemical Applications of Microtechnology - Grevenbroich, Ger
Duration: 1999 Sep 91999 Sep 11


ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Electrochemistry

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