Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer

Nao Takano, Naohiro Hosoda, Taro Yamada, Tetsuya Osaka

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.

Original languageEnglish
Pages (from-to)3743-3749
Number of pages7
JournalElectrochimica Acta
Volume44
Issue number21
Publication statusPublished - 1999 Jun 1

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Reducing Agents
Reducing agents
Silicon
Nickel
Silicon wafers
Plasma CVD
Auger electron spectroscopy
Deposits
Oxidation
Scanning electron microscopy

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Analytical Chemistry
  • Electrochemistry

Cite this

Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer. / Takano, Nao; Hosoda, Naohiro; Yamada, Taro; Osaka, Tetsuya.

In: Electrochimica Acta, Vol. 44, No. 21, 01.06.1999, p. 3743-3749.

Research output: Contribution to journalArticle

Takano, Nao ; Hosoda, Naohiro ; Yamada, Taro ; Osaka, Tetsuya. / Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer. In: Electrochimica Acta. 1999 ; Vol. 44, No. 21. pp. 3743-3749.
@article{026e10db9a0b46b89aee0fca60837211,
title = "Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer",
abstract = "The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.",
author = "Nao Takano and Naohiro Hosoda and Taro Yamada and Tetsuya Osaka",
year = "1999",
month = "6",
day = "1",
language = "English",
volume = "44",
pages = "3743--3749",
journal = "Electrochimica Acta",
issn = "0013-4686",
publisher = "Elsevier Limited",
number = "21",

}

TY - JOUR

T1 - Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer

AU - Takano, Nao

AU - Hosoda, Naohiro

AU - Yamada, Taro

AU - Osaka, Tetsuya

PY - 1999/6/1

Y1 - 1999/6/1

N2 - The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.

AB - The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.

UR - http://www.scopus.com/inward/record.url?scp=0032691679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032691679&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032691679

VL - 44

SP - 3743

EP - 3749

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

IS - 21

ER -