Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

Hiromitsu Kato, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki, Makoto Takiyama

    Research output: Contribution to journalArticle

    13 Citations (Scopus)

    Abstract

    The effect of ozone annealing on the charge trapping property of Ta2O5/Si3N4/p-Si capacitors was examined by measuring high-frequency capacitance-voltage and thermally stimulated current characteristics. The results suggest that two types of electron traps exist in the Ta2O5 layer and that the ozone annealing efficiently eliminates them.

    Original languageEnglish
    Pages (from-to)6791-6796
    Number of pages6
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume38
    Issue number12 A
    Publication statusPublished - 1999 Dec 1

    Fingerprint

    Low pressure chemical vapor deposition
    Charge trapping
    Ozone
    ozone
    capacitors
    Capacitors
    low pressure
    trapping
    vapor deposition
    Annealing
    Electron traps
    annealing
    Capacitance
    capacitance
    traps
    Electric potential
    electric potential
    electrons

    Keywords

    • Charge trapping property
    • Hysteresis loop
    • Ozone annealing
    • Tantalum pentaoxide (TaO)
    • Thermally stimulated current

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition. / Kato, Hiromitsu; Seol, Kwang Soo; Fujimaki, Makoto; Toyoda, Takehiko; Ohki, Yoshimichi; Takiyama, Makoto.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 12 A, 01.12.1999, p. 6791-6796.

    Research output: Contribution to journalArticle

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    AU - Ohki, Yoshimichi

    AU - Takiyama, Makoto

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