Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

Hiromitsu Kato, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki, Makoto Takiyama

    Research output: Contribution to journalArticle

    13 Citations (Scopus)


    The effect of ozone annealing on the charge trapping property of Ta2O5/Si3N4/p-Si capacitors was examined by measuring high-frequency capacitance-voltage and thermally stimulated current characteristics. The results suggest that two types of electron traps exist in the Ta2O5 layer and that the ozone annealing efficiently eliminates them.

    Original languageEnglish
    Pages (from-to)6791-6796
    Number of pages6
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number12 A
    Publication statusPublished - 1999 Dec 1



    • Charge trapping property
    • Hysteresis loop
    • Ozone annealing
    • Tantalum pentaoxide (TaO)
    • Thermally stimulated current

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this