Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

H. Kato, K. S. Seol, T. Toyoda, Yoshimichi Ohki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
    Editors Anon
    Place of PublicationTokyo, Japan
    PublisherInst Elec Eng Japan
    Pages131-134
    Number of pages4
    Publication statusPublished - 1998
    EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
    Duration: 1998 Sep 271998 Sep 30

    Other

    OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
    CityToyohashi, Jpn
    Period98/9/2798/9/30

    Fingerprint

    Low pressure chemical vapor deposition
    Charge trapping
    Ozone
    Capacitors
    Annealing
    Hole traps
    Electron traps
    Chemical vapor deposition
    silicon nitride

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    Cite this

    Kato, H., Seol, K. S., Toyoda, T., & Ohki, Y. (1998). Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition. In Anon (Ed.), Proceedings of the International Symposium on Electrical Insulating Materials (pp. 131-134). Tokyo, Japan: Inst Elec Eng Japan.

    Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition. / Kato, H.; Seol, K. S.; Toyoda, T.; Ohki, Yoshimichi.

    Proceedings of the International Symposium on Electrical Insulating Materials. ed. / Anon. Tokyo, Japan : Inst Elec Eng Japan, 1998. p. 131-134.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kato, H, Seol, KS, Toyoda, T & Ohki, Y 1998, Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition. in Anon (ed.), Proceedings of the International Symposium on Electrical Insulating Materials. Inst Elec Eng Japan, Tokyo, Japan, pp. 131-134, Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, 98/9/27.
    Kato H, Seol KS, Toyoda T, Ohki Y. Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition. In Anon, editor, Proceedings of the International Symposium on Electrical Insulating Materials. Tokyo, Japan: Inst Elec Eng Japan. 1998. p. 131-134
    Kato, H. ; Seol, K. S. ; Toyoda, T. ; Ohki, Yoshimichi. / Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition. Proceedings of the International Symposium on Electrical Insulating Materials. editor / Anon. Tokyo, Japan : Inst Elec Eng Japan, 1998. pp. 131-134
    @inproceedings{8c9d1d4238c44a0099ddd006020a5009,
    title = "Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition",
    abstract = "The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.",
    author = "H. Kato and Seol, {K. S.} and T. Toyoda and Yoshimichi Ohki",
    year = "1998",
    language = "English",
    pages = "131--134",
    editor = "Anon",
    booktitle = "Proceedings of the International Symposium on Electrical Insulating Materials",
    publisher = "Inst Elec Eng Japan",

    }

    TY - GEN

    T1 - Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

    AU - Kato, H.

    AU - Seol, K. S.

    AU - Toyoda, T.

    AU - Ohki, Yoshimichi

    PY - 1998

    Y1 - 1998

    N2 - The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

    AB - The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

    UR - http://www.scopus.com/inward/record.url?scp=0032317615&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0032317615&partnerID=8YFLogxK

    M3 - Conference contribution

    SP - 131

    EP - 134

    BT - Proceedings of the International Symposium on Electrical Insulating Materials

    A2 - Anon, null

    PB - Inst Elec Eng Japan

    CY - Tokyo, Japan

    ER -