Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

H. Kato, K. S. Seol, T. Toyoda, Y. Ohki

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

Original languageEnglish
Pages131-134
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Duration: 1998 Sep 271998 Sep 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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