Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

Hiromitsu Kato*, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki, Makoto Takiyama

*Corresponding author for this work

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