Effect of phonon-drag contributed seebeck coefficient on Si-Wire thermopile voltage output

Khotimatul Fauziah, Yuhei Suzuki, Yuki Narita, Yoshinari Kamakura, Takanobu Watanabe, Faiz Salleh, Hiroya Ikeda

Research output: Contribution to journalArticle

Abstract

In order to optimize the performance of thermoelectric devices, we have fabricated and characterized the micrometer-scaled Si thermopile preserving the phonon-drag effect, where the Si thermopile consists of p- and n-type Si wire pairs. The measured Seebeck coefficient of the p-type Si wire was found to be higher than the theoretical value calculated only from the carrier transport, which indicates the contribution of phonon-drag part. Moreover, the measured Seebeck coefficient increased with increasing the width of Si wire. This fact is considered due to dependency of phonon-drag part on the wire width originating from the reduction of phonon-boundary scattering. These contributions were observed also in measured output voltage of Si-wire thermopile. Hence, the output voltage of Si-wire thermopile is expected can be enhanced by utilizing the phonondrag effect in Si wire by optimizing its size and carrier concentration.

Original languageEnglish
Pages (from-to)475-478
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE102C
Issue number6
DOIs
Publication statusPublished - 2019 Jun 1

Keywords

  • Phonon drag
  • Seebeck coefficient
  • Si
  • Thermopile

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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