Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors

Taishi Takenobu, Kazuhiro Watanabe, Yohei Yomogida, Hidekazu Shimotani, Yoshihiro Iwasa

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Ambipolar organic field-effect transistors (OFETs) with comparable hole and electron mobilities were fabricated using pentacene single crystals. Ambipolar single-crystal transistors enable us to determine the intrinsic effect of postannealing on the performance of OFETs, which remains controversial. The results confirm that postannealing predominantly causes hole dedoping due to oxygen desorption.

Original languageEnglish
Article number073301
JournalApplied Physics Letters
Volume93
Issue number7
DOIs
Publication statusPublished - 2008
Externally publishedYes

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transistors
field effect transistors
single crystals
hole mobility
electron mobility
desorption
causes
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors. / Takenobu, Taishi; Watanabe, Kazuhiro; Yomogida, Yohei; Shimotani, Hidekazu; Iwasa, Yoshihiro.

In: Applied Physics Letters, Vol. 93, No. 7, 073301, 2008.

Research output: Contribution to journalArticle

Takenobu, T, Watanabe, K, Yomogida, Y, Shimotani, H & Iwasa, Y 2008, 'Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors', Applied Physics Letters, vol. 93, no. 7, 073301. https://doi.org/10.1063/1.2969772
Takenobu, Taishi ; Watanabe, Kazuhiro ; Yomogida, Yohei ; Shimotani, Hidekazu ; Iwasa, Yoshihiro. / Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors. In: Applied Physics Letters. 2008 ; Vol. 93, No. 7.
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