Effect of prebaking temperature on structure and ferroelectric properties of PZT thin films prepared by Sol-Gel method

Sachiko Ono, Masakatsu Maeda, Tetsuya Osaka, Ichiro Koiwa, Takao Kanehara, Juro Mita, Akira Hashimoto, Yoshihiro Sawada

Research output: Contribution to journalArticle

Abstract

The effect of prebaking temperature on the uniformity, crystal orientation, grain size and ferroelectric properties of the PZT thin films prepared by a sol-gel method on PbTiO3/Pt/SiO2/Si substrates was studied. The film prebaked at 200°C and annealed at 650°C showed relatively homogeneous surface morphology consisting of microcrystals with dispersed columnar crystal grains. It exhibited well-defined P-E hysteresis loops with P*r-Pr of 66 μC/cm2 and a leakage current of 3.40 × 10-5 A/cm2. In contrast, the film prebaked at 500°C and annealed at 650°C showed a "rosette" structure consisting of large crystal grains and residual microcrystals containing pyrochlore. This film exhibited rather inferior ferroelectric properties and uneven depth profiles of the constituent elements. The degree of preferred crystal orientation for (111) planes was found to decrease with increasing prebaking temperature, whereas no change was observed for the degree of (100) preferred orientation.

Original languageEnglish
Pages (from-to)1166-1173
Number of pages8
JournalDenki Kagaku
Volume64
Issue number11
Publication statusPublished - 1996

Fingerprint

Sol-gel process
Ferroelectric materials
Microcrystals
Crystal orientation
Thin films
Crystals
Hysteresis loops
Leakage currents
Temperature
Surface morphology
Substrates
pyrochlore

Keywords

  • Microstructure
  • Prebaking temperature
  • PZT
  • Sol-gel

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Ono, S., Maeda, M., Osaka, T., Koiwa, I., Kanehara, T., Mita, J., ... Sawada, Y. (1996). Effect of prebaking temperature on structure and ferroelectric properties of PZT thin films prepared by Sol-Gel method. Denki Kagaku, 64(11), 1166-1173.

Effect of prebaking temperature on structure and ferroelectric properties of PZT thin films prepared by Sol-Gel method. / Ono, Sachiko; Maeda, Masakatsu; Osaka, Tetsuya; Koiwa, Ichiro; Kanehara, Takao; Mita, Juro; Hashimoto, Akira; Sawada, Yoshihiro.

In: Denki Kagaku, Vol. 64, No. 11, 1996, p. 1166-1173.

Research output: Contribution to journalArticle

Ono, S, Maeda, M, Osaka, T, Koiwa, I, Kanehara, T, Mita, J, Hashimoto, A & Sawada, Y 1996, 'Effect of prebaking temperature on structure and ferroelectric properties of PZT thin films prepared by Sol-Gel method', Denki Kagaku, vol. 64, no. 11, pp. 1166-1173.
Ono, Sachiko ; Maeda, Masakatsu ; Osaka, Tetsuya ; Koiwa, Ichiro ; Kanehara, Takao ; Mita, Juro ; Hashimoto, Akira ; Sawada, Yoshihiro. / Effect of prebaking temperature on structure and ferroelectric properties of PZT thin films prepared by Sol-Gel method. In: Denki Kagaku. 1996 ; Vol. 64, No. 11. pp. 1166-1173.
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AU - Ono, Sachiko

AU - Maeda, Masakatsu

AU - Osaka, Tetsuya

AU - Koiwa, Ichiro

AU - Kanehara, Takao

AU - Mita, Juro

AU - Hashimoto, Akira

AU - Sawada, Yoshihiro

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N2 - The effect of prebaking temperature on the uniformity, crystal orientation, grain size and ferroelectric properties of the PZT thin films prepared by a sol-gel method on PbTiO3/Pt/SiO2/Si substrates was studied. The film prebaked at 200°C and annealed at 650°C showed relatively homogeneous surface morphology consisting of microcrystals with dispersed columnar crystal grains. It exhibited well-defined P-E hysteresis loops with P*r-P∧r of 66 μC/cm2 and a leakage current of 3.40 × 10-5 A/cm2. In contrast, the film prebaked at 500°C and annealed at 650°C showed a "rosette" structure consisting of large crystal grains and residual microcrystals containing pyrochlore. This film exhibited rather inferior ferroelectric properties and uneven depth profiles of the constituent elements. The degree of preferred crystal orientation for (111) planes was found to decrease with increasing prebaking temperature, whereas no change was observed for the degree of (100) preferred orientation.

AB - The effect of prebaking temperature on the uniformity, crystal orientation, grain size and ferroelectric properties of the PZT thin films prepared by a sol-gel method on PbTiO3/Pt/SiO2/Si substrates was studied. The film prebaked at 200°C and annealed at 650°C showed relatively homogeneous surface morphology consisting of microcrystals with dispersed columnar crystal grains. It exhibited well-defined P-E hysteresis loops with P*r-P∧r of 66 μC/cm2 and a leakage current of 3.40 × 10-5 A/cm2. In contrast, the film prebaked at 500°C and annealed at 650°C showed a "rosette" structure consisting of large crystal grains and residual microcrystals containing pyrochlore. This film exhibited rather inferior ferroelectric properties and uneven depth profiles of the constituent elements. The degree of preferred crystal orientation for (111) planes was found to decrease with increasing prebaking temperature, whereas no change was observed for the degree of (100) preferred orientation.

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