Effect of preparation conditions of Pd/Si dual seedlayer on the microstructure of [Co/Pd]n double-layered perpendicular magnetic recording media

J. Kawaji, Toru Asahi, H. Hashimoto, J. Hokkyo, Tetsuya Osaka, S. Matsunuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the Pd/Si dual layer is applied to the intermediate layer of [Co/Pd]n/CoZrNb double-layered media, and the effect of preparation conditions as described on the microstructure of [Co/Pd]n film and the seedlayer, and on the magnetic properties of the [Co/Pd]n film were investigated.

Original languageEnglish
Title of host publicationJoint NAPMRC 2003 - Digest of Technical Papers [Perpendicular Magnetic Recording Conference]
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages27
Number of pages1
ISBN (Print)078037746X, 9780780377462
DOIs
Publication statusPublished - 2003
EventJoint 2nd North American Perpendicular Magnetic Recording Conference, NAPMRC 2003 and 6th Perpendicular Magnetic Recording Conference - Monterey, United States
Duration: 2003 Jan 62003 Jan 8

Other

OtherJoint 2nd North American Perpendicular Magnetic Recording Conference, NAPMRC 2003 and 6th Perpendicular Magnetic Recording Conference
CountryUnited States
CityMonterey
Period03/1/603/1/8

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Keywords

  • Magnetic films
  • Magnetic properties
  • Magnetometers
  • Microstructure
  • Nonhomogeneous media
  • Perpendicular magnetic recording
  • Saturation magnetization
  • Soft magnetic materials
  • Sputtering
  • Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kawaji, J., Asahi, T., Hashimoto, H., Hokkyo, J., Osaka, T., & Matsunuma, S. (2003). Effect of preparation conditions of Pd/Si dual seedlayer on the microstructure of [Co/Pd]n double-layered perpendicular magnetic recording media. In Joint NAPMRC 2003 - Digest of Technical Papers [Perpendicular Magnetic Recording Conference] (pp. 27). [1177031] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NAPMRC.2003.1177031