Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals

Takashi Kato, Kazuhiko Kusunoki, Kazuaki Seki, Nobuhiro Okada, Kazuhito Kamei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the effect of the solution flow on crystalline morphology in off-axis 4H-SiC solution growth. In particular, we focused on the relationship between the Si solution flow and step flow directions. In step parallel flow in which the solution drifted transversely to the step flow direction of the off-axis substrate, it was possible to attain a better surface morphology than when the solution drifted in the other direction. Furthermore, the surface morphology was found to be improved as the flow velocity increased. These improvements in morphological stability are presumed to be caused by the aligning of the solute concentration fluctuation along the steps.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
PublisherTrans Tech Publications Ltd
Pages65-68
Number of pages4
Volume858
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: 2015 Oct 42015 Oct 9

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)02555476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period15/10/415/10/9

Fingerprint

Crystalline materials
Crystals
crystals
Surface morphology
parallel flow
Parallel flow
Flow velocity
solutes
flow velocity
Substrates
Direction compound

Keywords

  • Off-axis 4H-SiC
  • Solution flow
  • Surface morphology
  • Top-seeded solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kato, T., Kusunoki, K., Seki, K., Okada, N., & Kamei, K. (2016). Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals. In Silicon Carbide and Related Materials 2015 (Vol. 858, pp. 65-68). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.65

Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals. / Kato, Takashi; Kusunoki, Kazuhiko; Seki, Kazuaki; Okada, Nobuhiro; Kamei, Kazuhito.

Silicon Carbide and Related Materials 2015. Vol. 858 Trans Tech Publications Ltd, 2016. p. 65-68 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kato, T, Kusunoki, K, Seki, K, Okada, N & Kamei, K 2016, Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals. in Silicon Carbide and Related Materials 2015. vol. 858, Materials Science Forum, vol. 858, Trans Tech Publications Ltd, pp. 65-68, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 15/10/4. https://doi.org/10.4028/www.scientific.net/MSF.858.65
Kato T, Kusunoki K, Seki K, Okada N, Kamei K. Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals. In Silicon Carbide and Related Materials 2015. Vol. 858. Trans Tech Publications Ltd. 2016. p. 65-68. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.858.65
Kato, Takashi ; Kusunoki, Kazuhiko ; Seki, Kazuaki ; Okada, Nobuhiro ; Kamei, Kazuhito. / Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals. Silicon Carbide and Related Materials 2015. Vol. 858 Trans Tech Publications Ltd, 2016. pp. 65-68 (Materials Science Forum).
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