Effect of strain relaxation layers in high indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

S. Gozu, T. Kita, H. Sato, S. Yamada

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Fingerprint Dive into the research topics of 'Effect of strain relaxation layers in high indium content metamorphic InGaAs/InAlAs modulation doped heterostructures'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science