Abstract
The effect of simple structural randomness, such as stretching branching and surrounding, on the electronic structure of polysilane is investigated using molecular orbital calculation. The frontier orbital (homo and lumo) states consist mainly of skeleton Si. The fluctuation in the frontier orbital states due to such randomness are found to be quite small. Moreover, tailing of the resulting gap states into the energy gap is negligible.
Original language | English |
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Pages (from-to) | 6121-6133 |
Number of pages | 13 |
Journal | Journal of Physics C: Solid State Physics |
Volume | 18 |
Issue number | 33 |
DOIs | |
Publication status | Published - 1985 Nov 30 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Engineering(all)
- Physics and Astronomy(all)