EFFECT OF SUBSTRATE TEMPERATURE ON COMPOSITION RATIO X IN MOLECULAR-BEAM-EPITAXIAL GaAs//1// minus //xP//x.

Shun ichi Gonda, Yuichi Matsushima

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.

Original languageEnglish
Pages (from-to)4198-4200
Number of pages3
JournalJournal of Applied Physics
Volume47
Issue number9
DOIs
Publication statusPublished - 1976 Sep
Externally publishedYes

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molecular beams
temperature
molecular beam epitaxy
coefficients
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

EFFECT OF SUBSTRATE TEMPERATURE ON COMPOSITION RATIO X IN MOLECULAR-BEAM-EPITAXIAL GaAs//1// minus //xP//x. / Gonda, Shun ichi; Matsushima, Yuichi.

In: Journal of Applied Physics, Vol. 47, No. 9, 09.1976, p. 4198-4200.

Research output: Contribution to journalArticle

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