Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films

Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga, Noriyoshi Yamauchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The crystal orientation and residual stress in gallium nitride (GaN) films deposited on a single-crystal (0001) sapphire substrate using a new sputtering system are examined through x-ray diffraction measurements as part of a study of low-temperature sputtering techniques for GaN. The new if sputtering system has an isolated deposition chamber to prevent contamination with impurities, and is expected to produce high-purity nitride films. GaN films are deposited at various substrate temperatures and constant gas pressure and input power. This new system is found to produce GaN films with good crystal orientation, with the c-axes of GaN crystals oriented normal to the substrate surface. The crystal size of films deposited at high temperature is larger than that deposited at low Ts. All films except that deposited at 700°C exhibit compressive residual stress, and this residual stress is found to decrease with increasing temperature. Finally, the film deposited at 700°C was tinged with white, and the surface contained numerous micro-cracks.

Original languageEnglish
Title of host publicationResidual Stresses VII, ICRS 7 - Proceedings of the 7th International Conference on Residual Stresses, ICRS-7
PublisherTrans Tech Publications Ltd
Pages613-618
Number of pages6
ISBN (Print)0878499695, 9780878499694
DOIs
Publication statusPublished - 2005 Jan 1
Externally publishedYes
Event7th International Conference on Residual Stresses, ICRS-7 - Xi'an, China
Duration: 2004 Jun 142004 Jun 17

Publication series

NameMaterials Science Forum
Volume490-491
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference7th International Conference on Residual Stresses, ICRS-7
CountryChina
CityXi'an
Period04/6/1404/6/17

Keywords

  • Crystal orientation
  • Gallium nitride film
  • Residual stress
  • X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kusaka, K., Hanabusa, T., Tominaga, K., & Yamauchi, N. (2005). Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films. In Residual Stresses VII, ICRS 7 - Proceedings of the 7th International Conference on Residual Stresses, ICRS-7 (pp. 613-618). (Materials Science Forum; Vol. 490-491). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-969-5.613