Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films

Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga, Noriyoshi Yamauchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The crystal orientation and residual stress in gallium nitride (GaN) films deposited on a single-crystal (0001) sapphire substrate using a new sputtering system are examined through x-ray diffraction measurements as part of a study of low-temperature sputtering techniques for GaN. The new if sputtering system has an isolated deposition chamber to prevent contamination with impurities, and is expected to produce high-purity nitride films. GaN films are deposited at various substrate temperatures and constant gas pressure and input power. This new system is found to produce GaN films with good crystal orientation, with the c-axes of GaN crystals oriented normal to the substrate surface. The crystal size of films deposited at high temperature is larger than that deposited at low Ts. All films except that deposited at 700°C exhibit compressive residual stress, and this residual stress is found to decrease with increasing temperature. Finally, the film deposited at 700°C was tinged with white, and the surface contained numerous micro-cracks.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages613-618
Number of pages6
Volume490-491
Publication statusPublished - 2005
Externally publishedYes
Event7th International Conference on Residual Stresses, ICRS-7 - Xi'an
Duration: 2004 Jun 142004 Jun 17

Publication series

NameMaterials Science Forum
Volume490-491
ISSN (Print)02555476

Other

Other7th International Conference on Residual Stresses, ICRS-7
CityXi'an
Period04/6/1404/6/17

Fingerprint

Gallium nitride
Crystal orientation
Residual stresses
Substrates
Sputtering
Temperature
Crystals
Aluminum Oxide
gallium nitride
Compressive stress
Sapphire
Nitrides
Contamination
Diffraction
Gases
Single crystals
Impurities
Cracks
X rays

Keywords

  • Crystal orientation
  • Gallium nitride film
  • Residual stress
  • X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kusaka, K., Hanabusa, T., Tominaga, K., & Yamauchi, N. (2005). Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films. In Materials Science Forum (Vol. 490-491, pp. 613-618). (Materials Science Forum; Vol. 490-491).

Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films. / Kusaka, Kazuya; Hanabusa, Takao; Tominaga, Kikuo; Yamauchi, Noriyoshi.

Materials Science Forum. Vol. 490-491 2005. p. 613-618 (Materials Science Forum; Vol. 490-491).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kusaka, K, Hanabusa, T, Tominaga, K & Yamauchi, N 2005, Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films. in Materials Science Forum. vol. 490-491, Materials Science Forum, vol. 490-491, pp. 613-618, 7th International Conference on Residual Stresses, ICRS-7, Xi'an, 04/6/14.
Kusaka K, Hanabusa T, Tominaga K, Yamauchi N. Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films. In Materials Science Forum. Vol. 490-491. 2005. p. 613-618. (Materials Science Forum).
Kusaka, Kazuya ; Hanabusa, Takao ; Tominaga, Kikuo ; Yamauchi, Noriyoshi. / Effect of substrate temperature on crystal orientation and residual stress in RF sputtered gallium nitride films. Materials Science Forum. Vol. 490-491 2005. pp. 613-618 (Materials Science Forum).
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