Effect of sulfurization conditions on structural and electrical properties of copper sulfide films

Manisha Kundu, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We examined the structural and electrical properties of copper sulfide films as a function of the sulfurization time of 70-nm -thick Cu films. Copper sulfide films with various phases such as mixed metallic Cu-chalcocite, chalcocite, roxbyite, and mixed roxbyite-covellite phases were formed with increasing sulfurization time. The CuS atomic percentage ratio of the films decreased with increasing sulfurization time, and films with various compositions such as Cu-rich and stoichiometric copper sulfide with underlying unreacted Cu as well as pure stoichiometric and S-rich copper sulfide were obtained. The surface morphology and the electrical resistivity of the films depended on the chemical phase and composition of the films. The resistivity decreased with increasing Cu deficiency in the films. Distinct switching of the resistance from high to low-state, and vice versa, with the reversal of the bias polarity of the film was observed only for the mixed metallic Cu-chalcocite phased film with underlying Cu. However, the chalcocite film with underlying Cu exhibited a semiconducting behavior. This indicated that excess Cu within the chalcocite film is required for the observation of the switching behavior of the resistance.

Original languageEnglish
Article number073523
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008
Externally publishedYes

Fingerprint

copper sulfides
electrical properties
electrical resistivity
polarity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Effect of sulfurization conditions on structural and electrical properties of copper sulfide films. / Kundu, Manisha; Hasegawa, Tsuyoshi; Terabe, Kazuya; Aono, Masakazu.

In: Journal of Applied Physics, Vol. 103, No. 7, 073523, 2008.

Research output: Contribution to journalArticle

@article{4246b93dcfdc4e7f895af09f1b12dc42,
title = "Effect of sulfurization conditions on structural and electrical properties of copper sulfide films",
abstract = "We examined the structural and electrical properties of copper sulfide films as a function of the sulfurization time of 70-nm -thick Cu films. Copper sulfide films with various phases such as mixed metallic Cu-chalcocite, chalcocite, roxbyite, and mixed roxbyite-covellite phases were formed with increasing sulfurization time. The CuS atomic percentage ratio of the films decreased with increasing sulfurization time, and films with various compositions such as Cu-rich and stoichiometric copper sulfide with underlying unreacted Cu as well as pure stoichiometric and S-rich copper sulfide were obtained. The surface morphology and the electrical resistivity of the films depended on the chemical phase and composition of the films. The resistivity decreased with increasing Cu deficiency in the films. Distinct switching of the resistance from high to low-state, and vice versa, with the reversal of the bias polarity of the film was observed only for the mixed metallic Cu-chalcocite phased film with underlying Cu. However, the chalcocite film with underlying Cu exhibited a semiconducting behavior. This indicated that excess Cu within the chalcocite film is required for the observation of the switching behavior of the resistance.",
author = "Manisha Kundu and Tsuyoshi Hasegawa and Kazuya Terabe and Masakazu Aono",
year = "2008",
doi = "10.1063/1.2903599",
language = "English",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Effect of sulfurization conditions on structural and electrical properties of copper sulfide films

AU - Kundu, Manisha

AU - Hasegawa, Tsuyoshi

AU - Terabe, Kazuya

AU - Aono, Masakazu

PY - 2008

Y1 - 2008

N2 - We examined the structural and electrical properties of copper sulfide films as a function of the sulfurization time of 70-nm -thick Cu films. Copper sulfide films with various phases such as mixed metallic Cu-chalcocite, chalcocite, roxbyite, and mixed roxbyite-covellite phases were formed with increasing sulfurization time. The CuS atomic percentage ratio of the films decreased with increasing sulfurization time, and films with various compositions such as Cu-rich and stoichiometric copper sulfide with underlying unreacted Cu as well as pure stoichiometric and S-rich copper sulfide were obtained. The surface morphology and the electrical resistivity of the films depended on the chemical phase and composition of the films. The resistivity decreased with increasing Cu deficiency in the films. Distinct switching of the resistance from high to low-state, and vice versa, with the reversal of the bias polarity of the film was observed only for the mixed metallic Cu-chalcocite phased film with underlying Cu. However, the chalcocite film with underlying Cu exhibited a semiconducting behavior. This indicated that excess Cu within the chalcocite film is required for the observation of the switching behavior of the resistance.

AB - We examined the structural and electrical properties of copper sulfide films as a function of the sulfurization time of 70-nm -thick Cu films. Copper sulfide films with various phases such as mixed metallic Cu-chalcocite, chalcocite, roxbyite, and mixed roxbyite-covellite phases were formed with increasing sulfurization time. The CuS atomic percentage ratio of the films decreased with increasing sulfurization time, and films with various compositions such as Cu-rich and stoichiometric copper sulfide with underlying unreacted Cu as well as pure stoichiometric and S-rich copper sulfide were obtained. The surface morphology and the electrical resistivity of the films depended on the chemical phase and composition of the films. The resistivity decreased with increasing Cu deficiency in the films. Distinct switching of the resistance from high to low-state, and vice versa, with the reversal of the bias polarity of the film was observed only for the mixed metallic Cu-chalcocite phased film with underlying Cu. However, the chalcocite film with underlying Cu exhibited a semiconducting behavior. This indicated that excess Cu within the chalcocite film is required for the observation of the switching behavior of the resistance.

UR - http://www.scopus.com/inward/record.url?scp=42149169699&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149169699&partnerID=8YFLogxK

U2 - 10.1063/1.2903599

DO - 10.1063/1.2903599

M3 - Article

AN - SCOPUS:42149169699

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 073523

ER -