Effect of surface morphology on ionic response of reference field effect transistor

Shigeki Kuroiwa, Tomomi Shibasaki, Tetsuya Osaka

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Fabricating reference field effect transistor (FET) sensors instead of reference electrodes are important for the miniaturization and variegated applications of FET sensors. To make a reference FET, the gate surface of FET was modified with the self-assembled monolayer (SAM) of n- octadecyltrimethoxysilane (ODS). Though an ODSSAM FET had low pH-sensitivity, it was cation-sensitive. This work demonstrates the relation between the surface morphology and the cationic and pH-sensitivity of ODS-SAM FETs. A roughness parameter of atomic force microscope images, the mean summit curvature (Ssc) has correlation with the cationic and pH-sensitivity of ODS-SAM FETs.

Original languageEnglish
Pages (from-to)143-145
Number of pages3
JournalElectrochemistry
Volume78
Issue number2
Publication statusPublished - 2010 Feb

Fingerprint

Field effect transistors
Surface morphology
Self assembled monolayers
Gates (transistor)
Sensors
Cations
Microscopes
Surface roughness
Positive ions
Electrodes

Keywords

  • Field effect transistor
  • Self-assembled monolayer
  • Sensor
  • Surface morphology

ASJC Scopus subject areas

  • Electrochemistry

Cite this

Effect of surface morphology on ionic response of reference field effect transistor. / Kuroiwa, Shigeki; Shibasaki, Tomomi; Osaka, Tetsuya.

In: Electrochemistry, Vol. 78, No. 2, 02.2010, p. 143-145.

Research output: Contribution to journalArticle

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