Effect of the MgO substrate on the growth of GaN

R. Suzuki, A. Kawaharazuka, Y. Horikoshi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigate the effect of the MgO substrate on the growth of GaN by molecular beam epitaxy with radio frequency plasma source. MgO substrate is advantageous for its closer lattice constant to GaN. However, epitaxial GaN layer grown on MgO (1 1 1) substrate is often inclined about 2{ring operator} toward a particular a-axis of the GaN. This inclination is found to be caused by the domain structure of the MgO substrates. On the tilted domains of the substrate, the strain is effectively relaxed through the inclination. Another difficulty of MgO substrate is the diffusion of Mg atoms into the GaN layer. This Mg diffusion from the MgO substrate has successfully been suppressed by introducing the thin low-temperature grown AlN buffer layer. The AlN buffer also improves the crystalline quality of the GaN layer.

Original languageEnglish
Pages (from-to)2021-2024
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
Publication statusPublished - 2009 Mar 15

Fingerprint

Substrates
inclination
buffers
Plasma sources
Epitaxial layers
Buffer layers
Molecular beam epitaxy
Lattice constants
radio frequencies
Buffers
molecular beam epitaxy
Crystalline materials
operators
Atoms
rings
atoms
Temperature

Keywords

  • A1. Diffusion
  • A1. Growth models
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B1. Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Effect of the MgO substrate on the growth of GaN. / Suzuki, R.; Kawaharazuka, A.; Horikoshi, Y.

In: Journal of Crystal Growth, Vol. 311, No. 7, 15.03.2009, p. 2021-2024.

Research output: Contribution to journalArticle

Suzuki, R, Kawaharazuka, A & Horikoshi, Y 2009, 'Effect of the MgO substrate on the growth of GaN', Journal of Crystal Growth, vol. 311, no. 7, pp. 2021-2024. https://doi.org/10.1016/j.jcrysgro.2008.12.023
Suzuki, R. ; Kawaharazuka, A. ; Horikoshi, Y. / Effect of the MgO substrate on the growth of GaN. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 7. pp. 2021-2024.
@article{52c18eb4cffe4801afb65c63eaa64b46,
title = "Effect of the MgO substrate on the growth of GaN",
abstract = "We investigate the effect of the MgO substrate on the growth of GaN by molecular beam epitaxy with radio frequency plasma source. MgO substrate is advantageous for its closer lattice constant to GaN. However, epitaxial GaN layer grown on MgO (1 1 1) substrate is often inclined about 2{ring operator} toward a particular a-axis of the GaN. This inclination is found to be caused by the domain structure of the MgO substrates. On the tilted domains of the substrate, the strain is effectively relaxed through the inclination. Another difficulty of MgO substrate is the diffusion of Mg atoms into the GaN layer. This Mg diffusion from the MgO substrate has successfully been suppressed by introducing the thin low-temperature grown AlN buffer layer. The AlN buffer also improves the crystalline quality of the GaN layer.",
keywords = "A1. Diffusion, A1. Growth models, A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Nitrides, B1. Oxides",
author = "R. Suzuki and A. Kawaharazuka and Y. Horikoshi",
year = "2009",
month = "3",
day = "15",
doi = "10.1016/j.jcrysgro.2008.12.023",
language = "English",
volume = "311",
pages = "2021--2024",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "7",

}

TY - JOUR

T1 - Effect of the MgO substrate on the growth of GaN

AU - Suzuki, R.

AU - Kawaharazuka, A.

AU - Horikoshi, Y.

PY - 2009/3/15

Y1 - 2009/3/15

N2 - We investigate the effect of the MgO substrate on the growth of GaN by molecular beam epitaxy with radio frequency plasma source. MgO substrate is advantageous for its closer lattice constant to GaN. However, epitaxial GaN layer grown on MgO (1 1 1) substrate is often inclined about 2{ring operator} toward a particular a-axis of the GaN. This inclination is found to be caused by the domain structure of the MgO substrates. On the tilted domains of the substrate, the strain is effectively relaxed through the inclination. Another difficulty of MgO substrate is the diffusion of Mg atoms into the GaN layer. This Mg diffusion from the MgO substrate has successfully been suppressed by introducing the thin low-temperature grown AlN buffer layer. The AlN buffer also improves the crystalline quality of the GaN layer.

AB - We investigate the effect of the MgO substrate on the growth of GaN by molecular beam epitaxy with radio frequency plasma source. MgO substrate is advantageous for its closer lattice constant to GaN. However, epitaxial GaN layer grown on MgO (1 1 1) substrate is often inclined about 2{ring operator} toward a particular a-axis of the GaN. This inclination is found to be caused by the domain structure of the MgO substrates. On the tilted domains of the substrate, the strain is effectively relaxed through the inclination. Another difficulty of MgO substrate is the diffusion of Mg atoms into the GaN layer. This Mg diffusion from the MgO substrate has successfully been suppressed by introducing the thin low-temperature grown AlN buffer layer. The AlN buffer also improves the crystalline quality of the GaN layer.

KW - A1. Diffusion

KW - A1. Growth models

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B1. Oxides

UR - http://www.scopus.com/inward/record.url?scp=63349092567&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63349092567&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.12.023

DO - 10.1016/j.jcrysgro.2008.12.023

M3 - Article

VL - 311

SP - 2021

EP - 2024

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 7

ER -