EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Koichiro Mashiko, Michihiro Yamada, Yasuji Nagayama, Tsutomu Yoshihara, Takao Nakano

Research output: Contribution to journalArticle

Abstract

Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

Original languageEnglish
Pages (from-to)429-431
Number of pages3
JournalIEEE Journal of Solid-State Circuits
VolumeSC-18
Issue number4
Publication statusPublished - 1983 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Mashiko, K., Yamada, M., Nagayama, Y., Yoshihara, T., & Nakano, T. (1983). EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's. IEEE Journal of Solid-State Circuits, SC-18(4), 429-431.