Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

Hao Wu, Lian Ji, Ryo Harasawa, Yuya Yasue, Takanori Aritake, Canyu Jiang, Shulong Lu, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    Abstract

    The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

    Original languageEnglish
    Article number085119
    JournalAIP Advances
    Volume6
    Issue number8
    DOIs
    Publication statusPublished - 2016 Aug 1

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    beryllium
    electron spin
    annealing
    relaxation time
    carrier lifetime
    crystal growth
    molecular beam epitaxy
    pumps
    probes
    room temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk. / Wu, Hao; Ji, Lian; Harasawa, Ryo; Yasue, Yuya; Aritake, Takanori; Jiang, Canyu; Lu, Shulong; Tackeuchi, Atsushi.

    In: AIP Advances, Vol. 6, No. 8, 085119, 01.08.2016.

    Research output: Contribution to journalArticle

    Wu, Hao ; Ji, Lian ; Harasawa, Ryo ; Yasue, Yuya ; Aritake, Takanori ; Jiang, Canyu ; Lu, Shulong ; Tackeuchi, Atsushi. / Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk. In: AIP Advances. 2016 ; Vol. 6, No. 8.
    @article{54a48af12cfc4aa3ab2c249befced715,
    title = "Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk",
    abstract = "The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.",
    author = "Hao Wu and Lian Ji and Ryo Harasawa and Yuya Yasue and Takanori Aritake and Canyu Jiang and Shulong Lu and Atsushi Tackeuchi",
    year = "2016",
    month = "8",
    day = "1",
    doi = "10.1063/1.4961948",
    language = "English",
    volume = "6",
    journal = "AIP Advances",
    issn = "2158-3226",
    publisher = "American Institute of Physics Publising LLC",
    number = "8",

    }

    TY - JOUR

    T1 - Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

    AU - Wu, Hao

    AU - Ji, Lian

    AU - Harasawa, Ryo

    AU - Yasue, Yuya

    AU - Aritake, Takanori

    AU - Jiang, Canyu

    AU - Lu, Shulong

    AU - Tackeuchi, Atsushi

    PY - 2016/8/1

    Y1 - 2016/8/1

    N2 - The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

    AB - The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

    UR - http://www.scopus.com/inward/record.url?scp=84984684910&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84984684910&partnerID=8YFLogxK

    U2 - 10.1063/1.4961948

    DO - 10.1063/1.4961948

    M3 - Article

    AN - SCOPUS:84984684910

    VL - 6

    JO - AIP Advances

    JF - AIP Advances

    SN - 2158-3226

    IS - 8

    M1 - 085119

    ER -