Effect of wall surface wettability due to radiation induced surface activation on quenching process

Naohisa Tamura; Tatsuya Hazuku; Tomoji Takamasa; Kaichiro Mishima; Toru Mitsutake; Shinichi Morooka

Effect of wall surface wettability due to radiation induced surface activation on quenching process

Naohisa Tamura^*, Tatsuya Hazuku, Tomoji Takamasa, Kaichiro Mishima, Toru Mitsutake, Shinichi Morooka

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This report presents an experimental result on quenching which affected by the Radiation Induced Surface Activation. Increasing of quenching velocity requires that the cooling liquid can contact the heated surface, or a high wettability of the surface when quenching initiates. From this point of view, an experimental study to investigate the relationship between surface wettability and quenching was performed by use of an oxide semiconductor-coated material after γ-ray irradiation. The results showed that highly surface wettability or highly hydrophilic condition of a simulated fuel rod made of SUS was achieved, and the quenching velocities were increased up to 15 % after 300 kGy ⁶⁰Co γ-ray irradiation.

Original language	English
Title of host publication	Proceedings of the International Conference on Nuclear Engineering (ICONE12)
Pages	705-710
Number of pages	6
Volume	3
Publication status	Published - 2004
Externally published	Yes
Event	12th International Conference on Nuclear Engineering (ICONE12) - 2004 - Arlington, VA Duration: 2004 Apr 25 → 2004 Apr 29

Other

Other	12th International Conference on Nuclear Engineering (ICONE12) - 2004
City	Arlington, VA
Period	04/4/25 → 04/4/29

Keywords

Oxide metals
Quenching
Radiation induced surface activation
Surface wettability

ASJC Scopus subject areas

Engineering(all)

Cite this

Tamura, N, Hazuku, T, Takamasa, T, Mishima, K, Mitsutake, T & Morooka, S 2004, Effect of wall surface wettability due to radiation induced surface activation on quenching process. in Proceedings of the International Conference on Nuclear Engineering (ICONE12). vol. 3, pp. 705-710, 12th International Conference on Nuclear Engineering (ICONE12) - 2004, Arlington, VA, 04/4/25.

@inproceedings{515c4fe3320644eca358594b533bef61,

title = "Effect of wall surface wettability due to radiation induced surface activation on quenching process",

abstract = "This report presents an experimental result on quenching which affected by the Radiation Induced Surface Activation. Increasing of quenching velocity requires that the cooling liquid can contact the heated surface, or a high wettability of the surface when quenching initiates. From this point of view, an experimental study to investigate the relationship between surface wettability and quenching was performed by use of an oxide semiconductor-coated material after γ-ray irradiation. The results showed that highly surface wettability or highly hydrophilic condition of a simulated fuel rod made of SUS was achieved, and the quenching velocities were increased up to 15 % after 300 kGy 60Co γ-ray irradiation.",

keywords = "Oxide metals, Quenching, Radiation induced surface activation, Surface wettability",

author = "Naohisa Tamura and Tatsuya Hazuku and Tomoji Takamasa and Kaichiro Mishima and Toru Mitsutake and Shinichi Morooka",

year = "2004",

language = "English",

volume = "3",

pages = "705--710",

booktitle = "Proceedings of the International Conference on Nuclear Engineering (ICONE12)",

note = "12th International Conference on Nuclear Engineering (ICONE12) - 2004 ; Conference date: 25-04-2004 Through 29-04-2004",

}

TY - GEN

T1 - Effect of wall surface wettability due to radiation induced surface activation on quenching process

AU - Tamura, Naohisa

AU - Hazuku, Tatsuya

AU - Takamasa, Tomoji

AU - Mishima, Kaichiro

AU - Mitsutake, Toru

AU - Morooka, Shinichi

PY - 2004

Y1 - 2004

N2 - This report presents an experimental result on quenching which affected by the Radiation Induced Surface Activation. Increasing of quenching velocity requires that the cooling liquid can contact the heated surface, or a high wettability of the surface when quenching initiates. From this point of view, an experimental study to investigate the relationship between surface wettability and quenching was performed by use of an oxide semiconductor-coated material after γ-ray irradiation. The results showed that highly surface wettability or highly hydrophilic condition of a simulated fuel rod made of SUS was achieved, and the quenching velocities were increased up to 15 % after 300 kGy 60Co γ-ray irradiation.

AB - This report presents an experimental result on quenching which affected by the Radiation Induced Surface Activation. Increasing of quenching velocity requires that the cooling liquid can contact the heated surface, or a high wettability of the surface when quenching initiates. From this point of view, an experimental study to investigate the relationship between surface wettability and quenching was performed by use of an oxide semiconductor-coated material after γ-ray irradiation. The results showed that highly surface wettability or highly hydrophilic condition of a simulated fuel rod made of SUS was achieved, and the quenching velocities were increased up to 15 % after 300 kGy 60Co γ-ray irradiation.

KW - Oxide metals

KW - Quenching

KW - Radiation induced surface activation

KW - Surface wettability

UR - http://www.scopus.com/inward/record.url?scp=10644265235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10644265235&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:10644265235

VL - 3

SP - 705

EP - 710

BT - Proceedings of the International Conference on Nuclear Engineering (ICONE12)

T2 - 12th International Conference on Nuclear Engineering (ICONE12) - 2004

Y2 - 25 April 2004 through 29 April 2004

ER -

Effect of wall surface wettability due to radiation induced surface activation on quenching process

Abstract

Other

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this