Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

Taizo Nakasu, W. Sun, Masakazu Kobayashi, T. Asahi

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

    Original languageEnglish
    JournalJournal of Crystal Growth
    DOIs
    Publication statusAccepted/In press - 2016 Aug 12

    Fingerprint

    Aluminum Oxide
    Molecular beam epitaxy
    Sapphire
    sapphire
    molecular beam epitaxy
    Optical properties
    crystallinity
    Substrates
    Excitons
    Lattice constants
    zinc tellurides
    Zinc
    optical properties
    Poles
    Photoluminescence
    Crystal structure
    Cracks
    X ray diffraction
    X rays
    Thin films

    Keywords

    • A1. X-ray diffraction
    • A3. Molecular beam epitaxy
    • B1. Sapphire
    • B1. Zinc compounds
    • B2. Semiconducting II-VI materials
    • B3. Heterojunction semiconductor devices

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

    Cite this

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    title = "Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy",
    abstract = "Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.",
    keywords = "A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Sapphire, B1. Zinc compounds, B2. Semiconducting II-VI materials, B3. Heterojunction semiconductor devices",
    author = "Taizo Nakasu and W. Sun and Masakazu Kobayashi and T. Asahi",
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    language = "English",
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    TY - JOUR

    T1 - Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

    AU - Nakasu, Taizo

    AU - Sun, W.

    AU - Kobayashi, Masakazu

    AU - Asahi, T.

    PY - 2016/8/12

    Y1 - 2016/8/12

    N2 - Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

    AB - Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

    KW - A1. X-ray diffraction

    KW - A3. Molecular beam epitaxy

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    KW - B1. Zinc compounds

    KW - B2. Semiconducting II-VI materials

    KW - B3. Heterojunction semiconductor devices

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