Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. Denbaars, Takayuki Sota

    Research output: Contribution to journalArticle

    401 Citations (Scopus)

    Abstract

    The emission mechanisms of strained InxGa1-xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of the piezoelectric field, FPZ, and L exceed the valence band discontinuity, ΔEV. In this case, holes are confined in the triangular potential well formed at one side of the well producing the apparent Stokes-like shift. Under the condition that FPZ×L exceeds the conduction band discontinuity ΔEC, the electron-hole pair is confined at opposite sides of the well. The QCFK further modulated the emission energy for the wells with L greater than the three dimensional free exciton Bohr radius aB. On the other hand, effective in-plane localization of carriers in quantum disk size potential minima, which are produced by nonrandom alloy compositional fluctuation enhanced by the large bowing parameter and FPZ, produces a confined electron-hole pair whose wave functions are still overlapped (quantized excitons) provided that L<aB.

    Original languageEnglish
    Pages (from-to)2006-2008
    Number of pages3
    JournalApplied Physics Letters
    Volume73
    Issue number14
    DOIs
    Publication statusPublished - 1998

    Fingerprint

    inhomogeneity
    discontinuity
    excitons
    Stark effect
    conduction bands
    quantum wells
    wave functions
    valence
    radii
    shift
    products
    approximation
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S. F., Abare, A. C., Minsky, M. S., Keller, S., Fleischer, S. B., Bowers, J. E., ... Sota, T. (1998). Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures. Applied Physics Letters, 73(14), 2006-2008. https://doi.org/10.1063/1.122350

    Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures. / Chichibu, S. F.; Abare, A. C.; Minsky, M. S.; Keller, S.; Fleischer, S. B.; Bowers, J. E.; Hu, E.; Mishra, U. K.; Coldren, L. A.; Denbaars, S. P.; Sota, Takayuki.

    In: Applied Physics Letters, Vol. 73, No. 14, 1998, p. 2006-2008.

    Research output: Contribution to journalArticle

    Chichibu, SF, Abare, AC, Minsky, MS, Keller, S, Fleischer, SB, Bowers, JE, Hu, E, Mishra, UK, Coldren, LA, Denbaars, SP & Sota, T 1998, 'Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures', Applied Physics Letters, vol. 73, no. 14, pp. 2006-2008. https://doi.org/10.1063/1.122350
    Chichibu SF, Abare AC, Minsky MS, Keller S, Fleischer SB, Bowers JE et al. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures. Applied Physics Letters. 1998;73(14):2006-2008. https://doi.org/10.1063/1.122350
    Chichibu, S. F. ; Abare, A. C. ; Minsky, M. S. ; Keller, S. ; Fleischer, S. B. ; Bowers, J. E. ; Hu, E. ; Mishra, U. K. ; Coldren, L. A. ; Denbaars, S. P. ; Sota, Takayuki. / Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures. In: Applied Physics Letters. 1998 ; Vol. 73, No. 14. pp. 2006-2008.
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