Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction

S. F. Chichibu, A. Setoguchi, T. Azuhata, J. Müllhäuser, M. Sugiyama, T. Mizutani, T. Deguchi, H. Nakanishi, Takayuki Sota, O. Brandt, K. H. Ploog, T. Mukai, S. Nakamura

    Research output: Contribution to journalArticle

    Abstract

    InxGa1-xN quantum well (QW) structures having high InN mole fractions, x, of both hexagonal and cubic phases were investigated to verify the importance of localized QW excitons in their spontaneous emission mechanisms. The internal piezoelectric field (FPZ) across the QWs in the hexagonal phase naturally increases with increasing x since the in-plain strain increases. The field was confirmed to point from the surface to the substrate. Absorption spectra of both hexagonal and cubic InGaN QWs exhibited a broad band-tail regardless of the presence of FPZ normal to the QW plane. The emission lifetime of the InGaN single-quantum-well amber light emitting diode increased with increasing detection wavelength. Its electroluminescence (EL) did not show a remarkable energy shift between 20 and 300 K, and the higher energy portion of the spectra increased more rapidly than that of the lower energy one. This may reflect thermal distribution of the Fermi level within the tail states. Since the well thickness is only 2.5 nm, the device exhibited a reasonably efficient emission in spite of the presence of FPZ and large number of threading dislocations.

    Original languageEnglish
    Pages (from-to)321-325
    Number of pages5
    JournalPhysica Status Solidi (A) Applied Research
    Volume180
    Issue number1
    DOIs
    Publication statusPublished - 2000 Jul

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    Excitons
    Semiconductor quantum wells
    excitons
    quantum wells
    Amber
    Spontaneous emission
    Electroluminescence
    Fermi level
    plains
    electroluminescence
    spontaneous emission
    Light emitting diodes
    energy
    Absorption spectra
    light emitting diodes
    broadband
    absorption spectra
    life (durability)
    Wavelength
    LDS 751

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction. / Chichibu, S. F.; Setoguchi, A.; Azuhata, T.; Müllhäuser, J.; Sugiyama, M.; Mizutani, T.; Deguchi, T.; Nakanishi, H.; Sota, Takayuki; Brandt, O.; Ploog, K. H.; Mukai, T.; Nakamura, S.

    In: Physica Status Solidi (A) Applied Research, Vol. 180, No. 1, 07.2000, p. 321-325.

    Research output: Contribution to journalArticle

    Chichibu, SF, Setoguchi, A, Azuhata, T, Müllhäuser, J, Sugiyama, M, Mizutani, T, Deguchi, T, Nakanishi, H, Sota, T, Brandt, O, Ploog, KH, Mukai, T & Nakamura, S 2000, 'Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction', Physica Status Solidi (A) Applied Research, vol. 180, no. 1, pp. 321-325. https://doi.org/10.1002/1521-396X(200007)180:1<321::AID-PSSA321>3.0.CO;2-E
    Chichibu, S. F. ; Setoguchi, A. ; Azuhata, T. ; Müllhäuser, J. ; Sugiyama, M. ; Mizutani, T. ; Deguchi, T. ; Nakanishi, H. ; Sota, Takayuki ; Brandt, O. ; Ploog, K. H. ; Mukai, T. ; Nakamura, S. / Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction. In: Physica Status Solidi (A) Applied Research. 2000 ; Vol. 180, No. 1. pp. 321-325.
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    AU - Müllhäuser, J.

    AU - Sugiyama, M.

    AU - Mizutani, T.

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    AU - Nakanishi, H.

    AU - Sota, Takayuki

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