Recently, the requirement for non-volatile memory on embedded systems has increased because they can be applied with normally-off and power gating technologies to. However, they have a lower endurance than volatile memories. When data is encoded as a write-reduction code appropriately, the endurance of non-volatile memory can be enhanced by writing the encoded data into the memory. We propose a highly effective write-reduction method for a multi-level cell (MLC) non-volatile memory focusing on the write-reduction code (WRC) as the optimal bit-write reduction method. The WRC can be applied only to single-level cell non-volatile memory. The proposed method generates a cell-write reduction code based on the WRC; the cell has multiple bits as the holdable data. Our proposed method achieves a cell-write reduction by 31.6% compared to the conventional method.