Effects of atomic disorder on carrier transport in Si nanowire transistors

Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Nobuya Mori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect- transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function methods. Simulation results show that the injection velocity in n-type Si NW FETs is less affected by the disorder compared to p-type devices, which can be attributed to differences in the in-plane carrier profile.

    Original languageEnglish
    Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    Pages27-30
    Number of pages4
    DOIs
    Publication statusPublished - 2011
    Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka
    Duration: 2011 Sep 82011 Sep 10

    Other

    Other2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
    CityOsaka
    Period11/9/811/9/10

    Fingerprint

    Field-effect Transistor
    Carrier transport
    Nanowires
    Field effect transistors
    Disorder
    Transistors
    Tight-binding
    Electronic states
    Green's function
    Molecular Dynamics
    Oxidation
    Non-equilibrium
    Molecular dynamics
    Injection
    Electronics
    Simulation
    Profile

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

    Cite this

    Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., & Mori, N. (2011). Effects of atomic disorder on carrier transport in Si nanowire transistors. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 27-30). [6035041] https://doi.org/10.1109/SISPAD.2011.6035041

    Effects of atomic disorder on carrier transport in Si nanowire transistors. / Minari, Hideki; Zushi, Tomofumi; Watanabe, Takanobu; Kamakura, Yoshinari; Mori, Nobuya.

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. p. 27-30 6035041.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Minari, H, Zushi, T, Watanabe, T, Kamakura, Y & Mori, N 2011, Effects of atomic disorder on carrier transport in Si nanowire transistors. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 6035041, pp. 27-30, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, 11/9/8. https://doi.org/10.1109/SISPAD.2011.6035041
    Minari H, Zushi T, Watanabe T, Kamakura Y, Mori N. Effects of atomic disorder on carrier transport in Si nanowire transistors. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. p. 27-30. 6035041 https://doi.org/10.1109/SISPAD.2011.6035041
    Minari, Hideki ; Zushi, Tomofumi ; Watanabe, Takanobu ; Kamakura, Yoshinari ; Mori, Nobuya. / Effects of atomic disorder on carrier transport in Si nanowire transistors. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. pp. 27-30
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