Effects of atomic disorder on carrier transport in Si nanowire transistors

Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Nobuya Mori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect- transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function methods. Simulation results show that the injection velocity in n-type Si NW FETs is less affected by the disorder compared to p-type devices, which can be attributed to differences in the in-plane carrier profile.

Original languageEnglish
Title of host publication2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages27-30
Number of pages4
DOIs
Publication statusPublished - 2011 Nov 1
Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
Duration: 2011 Sep 82011 Sep 10

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
CountryJapan
CityOsaka
Period11/9/811/9/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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