Effects of atomic disorder on carrier transport in Si nanowire transistors

Hideki Minari; Tomofumi Zushi; Takanobu Watanabe; Yoshinari Kamakura; Nobuya Mori

doi:10.1109/SISPAD.2011.6035041

Effects of atomic disorder on carrier transport in Si nanowire transistors

Hideki Minari^*, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Nobuya Mori

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect- transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function methods. Simulation results show that the injection velocity in n-type Si NW FETs is less affected by the disorder compared to p-type devices, which can be attributed to differences in the in-plane carrier profile.

Original language	English
Title of host publication	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages	27-30
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2011.6035041
Publication status	Published - 2011 Nov 1
Event	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan Duration: 2011 Sept 8 → 2011 Sept 10

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Country/Territory	Japan
City	Osaka
Period	11/9/8 → 11/9/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

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10.1109/SISPAD.2011.6035041

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Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., & Mori, N. (2011). Effects of atomic disorder on carrier transport in Si nanowire transistors. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 27-30). [6035041] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035041

Effects of atomic disorder on carrier transport in Si nanowire transistors. / Minari, Hideki; Zushi, Tomofumi; Watanabe, Takanobu et al.

2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 27-30 6035041 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Minari, H, Zushi, T, Watanabe, T, Kamakura, Y & Mori, N 2011, Effects of atomic disorder on carrier transport in Si nanowire transistors. in 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011., 6035041, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 27-30, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, Japan, 11/9/8. https://doi.org/10.1109/SISPAD.2011.6035041

Minari H, Zushi T, Watanabe T, Kamakura Y, Mori N. Effects of atomic disorder on carrier transport in Si nanowire transistors. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 27-30. 6035041. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2011.6035041

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AU - Mori, Nobuya

PY - 2011/11/1

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Effects of atomic disorder on carrier transport in Si nanowire transistors

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