Effects of atomic disorder on impact ionization rate in silicon nanodots

N. Mori; M. Tomita; H. Minari; T. Watanabe; N. Koshida

doi:10.1063/1.4848445

Effects of atomic disorder on impact ionization rate in silicon nanodots

N. Mori, M. Tomita, H. Minari, T. Watanabe, N. Koshida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We theoretically investigate effects of atomic disorder existing near the Si/SiO₂ interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.

Original language	English
Title of host publication	Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
Publisher	American Institute of Physics Inc.
Pages	381-382
Number of pages	2
ISBN (Print)	9780735411944
DOIs	https://doi.org/10.1063/1.4848445
Publication status	Published - 2013
Event	31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: 2012 Jul 29 → 2012 Aug 3

Publication series

Name	AIP Conference Proceedings
Volume	1566
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	31st International Conference on the Physics of Semiconductors, ICPS 2012
Country/Territory	Switzerland
City	Zurich
Period	12/7/29 → 12/8/3

Keywords

Avalanche Photodiode
Impact ionization
Molecular-Dynamics Calculation
Monte Carlo Simulation
Nanocrystalline Silicon

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.4848445

Cite this

Mori, N., Tomita, M., Minari, H., Watanabe, T., & Koshida, N. (2013). Effects of atomic disorder on impact ionization rate in silicon nanodots. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 381-382). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848445

Effects of atomic disorder on impact ionization rate in silicon nanodots. / Mori, N.; Tomita, M.; Minari, H. et al.

Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., 2013. p. 381-382 (AIP Conference Proceedings; Vol. 1566).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mori, N, Tomita, M, Minari, H, Watanabe, T & Koshida, N 2013, Effects of atomic disorder on impact ionization rate in silicon nanodots. in Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. AIP Conference Proceedings, vol. 1566, American Institute of Physics Inc., pp. 381-382, 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, 12/7/29. https://doi.org/10.1063/1.4848445

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abstract = "We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.",

keywords = "Avalanche Photodiode, Impact ionization, Molecular-Dynamics Calculation, Monte Carlo Simulation, Nanocrystalline Silicon",

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KW - Impact ionization

KW - Molecular-Dynamics Calculation

KW - Monte Carlo Simulation

KW - Nanocrystalline Silicon

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Effects of atomic disorder on impact ionization rate in silicon nanodots

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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