Effects of atomic disorder on impact ionization rate in silicon nanodots

N. Mori, M. Tomita, H. Minari, Takanobu Watanabe, N. Koshida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    PublisherAmerican Institute of Physics Inc.
    Pages381-382
    Number of pages2
    Volume1566
    ISBN (Print)9780735411944
    DOIs
    Publication statusPublished - 2013
    Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich
    Duration: 2012 Jul 292012 Aug 3

    Other

    Other31st International Conference on the Physics of Semiconductors, ICPS 2012
    CityZurich
    Period12/7/2912/8/3

    Fingerprint

    disorders
    ionization
    silicon
    thresholds
    energy

    Keywords

    • Avalanche Photodiode
    • Impact ionization
    • Molecular-Dynamics Calculation
    • Monte Carlo Simulation
    • Nanocrystalline Silicon

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Mori, N., Tomita, M., Minari, H., Watanabe, T., & Koshida, N. (2013). Effects of atomic disorder on impact ionization rate in silicon nanodots. In AIP Conference Proceedings (Vol. 1566, pp. 381-382). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848445

    Effects of atomic disorder on impact ionization rate in silicon nanodots. / Mori, N.; Tomita, M.; Minari, H.; Watanabe, Takanobu; Koshida, N.

    AIP Conference Proceedings. Vol. 1566 American Institute of Physics Inc., 2013. p. 381-382.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Mori, N, Tomita, M, Minari, H, Watanabe, T & Koshida, N 2013, Effects of atomic disorder on impact ionization rate in silicon nanodots. in AIP Conference Proceedings. vol. 1566, American Institute of Physics Inc., pp. 381-382, 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, 12/7/29. https://doi.org/10.1063/1.4848445
    Mori N, Tomita M, Minari H, Watanabe T, Koshida N. Effects of atomic disorder on impact ionization rate in silicon nanodots. In AIP Conference Proceedings. Vol. 1566. American Institute of Physics Inc. 2013. p. 381-382 https://doi.org/10.1063/1.4848445
    Mori, N. ; Tomita, M. ; Minari, H. ; Watanabe, Takanobu ; Koshida, N. / Effects of atomic disorder on impact ionization rate in silicon nanodots. AIP Conference Proceedings. Vol. 1566 American Institute of Physics Inc., 2013. pp. 381-382
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    keywords = "Avalanche Photodiode, Impact ionization, Molecular-Dynamics Calculation, Monte Carlo Simulation, Nanocrystalline Silicon",
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