Effects of atomic disorder on impact ionization rate in silicon nanodots

N. Mori, M. Tomita, H. Minari, T. Watanabe, N. Koshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages381-382
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • Avalanche Photodiode
  • Impact ionization
  • Molecular-Dynamics Calculation
  • Monte Carlo Simulation
  • Nanocrystalline Silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Effects of atomic disorder on impact ionization rate in silicon nanodots'. Together they form a unique fingerprint.

Cite this