Effects of atomic disorder on impact ionization rate in silicon nanodots

N. Mori, M. Tomita, H. Minari, T. Watanabe, N. Koshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages381-382
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013 Jan 1
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • Avalanche Photodiode
  • Impact ionization
  • Molecular-Dynamics Calculation
  • Monte Carlo Simulation
  • Nanocrystalline Silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Mori, N., Tomita, M., Minari, H., Watanabe, T., & Koshida, N. (2013). Effects of atomic disorder on impact ionization rate in silicon nanodots. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 381-382). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848445