Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura

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Abstract

Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.

Original languageEnglish
Pages (from-to)3766-3768
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number26
DOIs
Publication statusPublished - 1996 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chichibu, S., Shikanai, A., Azuhata, T., Sota, T., Kuramata, A., Horino, K., & Nakamura, S. (1996). Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers. Applied Physics Letters, 68(26), 3766-3768. https://doi.org/10.1063/1.116000