Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

S. Chichibu, A. Shikanai, T. Azuhata, Takayuki Sota, A. Kuramata, K. Horino, S. Nakamura

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    Abstract

    Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.

    Original languageEnglish
    Pages (from-to)3766-3768
    Number of pages3
    JournalApplied Physics Letters
    Volume68
    Issue number26
    DOIs
    Publication statusPublished - 1996

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S., Shikanai, A., Azuhata, T., Sota, T., Kuramata, A., Horino, K., & Nakamura, S. (1996). Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers. Applied Physics Letters, 68(26), 3766-3768. https://doi.org/10.1063/1.116000