Effects of biexciton on the polarization-sensitive cavity polariton beats in the third-order regime

Takao Aoki, Y. P. Svirko, M. Kuwata-Gonokami, H. M. Gibbs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The third-order nonlinear response of the strongly coupled cavity-exciton system shows strong signatures of the long- and short-living four-particle correlations, which manifest themselves in polarization-sensitive four-wave mixing (FWM). In particular, the long-living correlation due to the biexciton may dominate in the third-order nonlinearity of the exciton-cavity system. In presence of inhomogeneous broadening, biexciton gives rise to the oscillation in the time-integrated (TI) FWM signal at positive time delay with biexciton binding frequency, ωb, allowing one to estimate biexciton contribution to the third-order nonlinearity. However, in the strongly coupled exciton-cavity system, TI FWM measurements have been performed only in a polarization configuration that does not permit the biexcitonic contribution. We report on the observation of the biexcitonic signature in the TI FWM signal from a semiconductor microcavity with an In0.03Ga0.97As single quantum well.

Original languageEnglish
Title of host publicationTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages204
Number of pages1
ISBN (Print)155752663X, 9781557526632
DOIs
Publication statusPublished - 2001
Externally publishedYes
EventQuantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States
Duration: 2001 May 62001 May 11

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2001
CountryUnited States
CityBaltimore
Period01/5/601/5/11

Fingerprint

Four wave mixing
four-wave mixing
polaritons
synchronism
Excitons
Polarization
cavities
excitons
polarization
nonlinearity
signatures
Microcavities
Semiconductor quantum wells
Time delay
time lag
quantum wells
Semiconductor materials
oscillations
estimates
configurations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Aoki, T., Svirko, Y. P., Kuwata-Gonokami, M., & Gibbs, H. M. (2001). Effects of biexciton on the polarization-sensitive cavity polariton beats in the third-order regime. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 204). [979950] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QELS.2001.979950

Effects of biexciton on the polarization-sensitive cavity polariton beats in the third-order regime. / Aoki, Takao; Svirko, Y. P.; Kuwata-Gonokami, M.; Gibbs, H. M.

Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 204 979950.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aoki, T, Svirko, YP, Kuwata-Gonokami, M & Gibbs, HM 2001, Effects of biexciton on the polarization-sensitive cavity polariton beats in the third-order regime. in Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001., 979950, Institute of Electrical and Electronics Engineers Inc., pp. 204, Quantum Electronics and Laser Science Conference, QELS 2001, Baltimore, United States, 01/5/6. https://doi.org/10.1109/QELS.2001.979950
Aoki T, Svirko YP, Kuwata-Gonokami M, Gibbs HM. Effects of biexciton on the polarization-sensitive cavity polariton beats in the third-order regime. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 204. 979950 https://doi.org/10.1109/QELS.2001.979950
Aoki, Takao ; Svirko, Y. P. ; Kuwata-Gonokami, M. ; Gibbs, H. M. / Effects of biexciton on the polarization-sensitive cavity polariton beats in the third-order regime. Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 204
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N2 - The third-order nonlinear response of the strongly coupled cavity-exciton system shows strong signatures of the long- and short-living four-particle correlations, which manifest themselves in polarization-sensitive four-wave mixing (FWM). In particular, the long-living correlation due to the biexciton may dominate in the third-order nonlinearity of the exciton-cavity system. In presence of inhomogeneous broadening, biexciton gives rise to the oscillation in the time-integrated (TI) FWM signal at positive time delay with biexciton binding frequency, ωb, allowing one to estimate biexciton contribution to the third-order nonlinearity. However, in the strongly coupled exciton-cavity system, TI FWM measurements have been performed only in a polarization configuration that does not permit the biexcitonic contribution. We report on the observation of the biexcitonic signature in the TI FWM signal from a semiconductor microcavity with an In0.03Ga0.97As single quantum well.

AB - The third-order nonlinear response of the strongly coupled cavity-exciton system shows strong signatures of the long- and short-living four-particle correlations, which manifest themselves in polarization-sensitive four-wave mixing (FWM). In particular, the long-living correlation due to the biexciton may dominate in the third-order nonlinearity of the exciton-cavity system. In presence of inhomogeneous broadening, biexciton gives rise to the oscillation in the time-integrated (TI) FWM signal at positive time delay with biexciton binding frequency, ωb, allowing one to estimate biexciton contribution to the third-order nonlinearity. However, in the strongly coupled exciton-cavity system, TI FWM measurements have been performed only in a polarization configuration that does not permit the biexcitonic contribution. We report on the observation of the biexcitonic signature in the TI FWM signal from a semiconductor microcavity with an In0.03Ga0.97As single quantum well.

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