Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth

S. Endo, K. Kamei, Y. Kishida, K. Moriguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The off-axis solution growth of 4H-SiC was studied focusing on the morphological instabilities by using conventional TSSG technique. The morphology depends strongly on the crystalline polarity, and that on Si surface can be characterized by wandering while that on C surface is characterized by strong step-bunching. By raising the temperature gradient, step bunching on Si surface is considerably suppressed which can be consistent to the constitutional super cooling scheme. However, C surface exhibits strong step bunching as the temperature gradient increase. These behaviors can be explained by the difference in Ehrlich-Schwoebel barrier and diffusion behavior of adatoms.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages26-30
Number of pages5
Volume821-823
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 2014 Sep 212014 Sep 25

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)02555476

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

Fingerprint

bunching
Thermal gradients
temperature gradients
polarity
Crystalline materials
gradients
Adatoms
adatoms
Cooling
cooling

Keywords

  • 4H-SiC
  • Off-axis
  • Polarity
  • Solution growth
  • Step bunching
  • Temperature gradient
  • Wandering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Endo, S., Kamei, K., Kishida, Y., & Moriguchi, K. (2015). Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth. In Materials Science Forum (Vol. 821-823, pp. 26-30). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.26

Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth. / Endo, S.; Kamei, K.; Kishida, Y.; Moriguchi, K.

Materials Science Forum. Vol. 821-823 Trans Tech Publications Ltd, 2015. p. 26-30 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Endo, S, Kamei, K, Kishida, Y & Moriguchi, K 2015, Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth. in Materials Science Forum. vol. 821-823, Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 26-30, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 14/9/21. https://doi.org/10.4028/www.scientific.net/MSF.821-823.26
Endo S, Kamei K, Kishida Y, Moriguchi K. Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth. In Materials Science Forum. Vol. 821-823. Trans Tech Publications Ltd. 2015. p. 26-30. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.821-823.26
Endo, S. ; Kamei, K. ; Kishida, Y. ; Moriguchi, K. / Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth. Materials Science Forum. Vol. 821-823 Trans Tech Publications Ltd, 2015. pp. 26-30 (Materials Science Forum).
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