Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

Shigeyuki Akiba, Kazuo Sakai, Yuichi Matsushima, Takaya Yamamoto

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Abstract

The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

Original languageEnglish
Pages (from-to)L79-L82
JournalJapanese Journal of Applied Physics
Volume19
Issue number2
DOIs
Publication statusPublished - 1980
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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