Abstract
The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.
| Original language | English |
|---|---|
| Pages (from-to) | L79-L82 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 19 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1980 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Akiba, S., Sakai, K., Matsushima, Y., & Yamamoto, T. (1980). Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range. Japanese Journal of Applied Physics, 19(2), L79-L82. https://doi.org/10.1143/JJAP.19.L79