Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

Shigeyuki Akiba; Kazuo Sakai; Yuichi Matsushima; Takaya Yamamoto

doi:10.1143/JJAP.19.L79

Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

Shigeyuki Akiba, Kazuo Sakai, Yuichi Matsushima, Takaya Yamamoto

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

Original language	English
Pages (from-to)	L79-L82
Journal	Japanese Journal of Applied Physics
Volume	19
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.19.L79
Publication status	Published - 1980
Externally published	Yes

Fingerprint

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Akiba, S., Sakai, K., Matsushima, Y., & Yamamoto, T. (1980). Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range. Japanese Journal of Applied Physics, 19(2), L79-L82. https://doi.org/10.1143/JJAP.19.L79

@article{0fde635c31df4c459e8600e7455425c5,

title = "Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range",

abstract = "The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.",

author = "Shigeyuki Akiba and Kazuo Sakai and Yuichi Matsushima and Takaya Yamamoto",

year = "1980",

doi = "10.1143/JJAP.19.L79",

language = "English",

volume = "19",

pages = "L79--L82",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

AU - Akiba, Shigeyuki

AU - Sakai, Kazuo

AU - Matsushima, Yuichi

AU - Yamamoto, Takaya

PY - 1980

Y1 - 1980

N2 - The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

AB - The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

UR - http://www.scopus.com/inward/record.url?scp=24444462970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24444462970&partnerID=8YFLogxK

U2 - 10.1143/JJAP.19.L79

DO - 10.1143/JJAP.19.L79

M3 - Article

AN - SCOPUS:24444462970

VL - 19

SP - L79-L82

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2

ER -

Access to Document

10.1143/JJAP.19.L79