TY - JOUR
T1 - Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range
AU - Akiba, Shigeyuki
AU - Sakai, Kazuo
AU - Matsushima, Yuichi
AU - Yamamoto, Takaya
PY - 1980
Y1 - 1980
N2 - The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.
AB - The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.
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U2 - 10.1143/JJAP.19.L79
DO - 10.1143/JJAP.19.L79
M3 - Article
AN - SCOPUS:24444462970
VL - 19
SP - L79-L82
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2
ER -