Effects of electron irradiation on two-dimensional electron gas in algaas/gaas heterostructure

Toshimi Wada, Toshihiko Kanayama, Shingo Ichimura, Yoshinobu Sugiyama, Shunji Mlsawa, Masanori Komuro

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper describes how the two-dimensional electron gases in AlGaAs/GaAs heterostructures are degraded by low-energy electron irradiation. Both the electron mobility and the two-dimensional carriers are shown to decrease considerably by a 1 x 1017/cm2 irradiation with the incident electron energy of 8 keV. Comparing the experimental results both with the Monte Carlo simulation and with the theoretical mobility calculation, we speculated that the mobility degradation and the 2D carrier compensation are partly caused by the formation of complex defects in the GaAs buffer layer which are due to the excitations of core electrons of As and that the mobility is further degraded by the formation of short-range scatterers in the AlGaAs/GaAs heterointerface.

Original languageEnglish
Pages (from-to)6262-6267
Number of pages6
JournalJapanese journal of applied physics
Volume32
Issue number12 S
DOIs
Publication statusPublished - 1993 Dec
Externally publishedYes

Keywords

  • AlGaAs/GaAs
  • Electron beam lithography
  • Irradiation-induced damage
  • Mobility
  • Monte Carlo simulation
  • Two-dimensional carrier
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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