Effects of energetic negative ions generated from sputtering targets on ScAlN film growth

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.

    Original languageEnglish
    Title of host publication2016 IEEE International Ultrasonics Symposium, IUS 2016
    PublisherIEEE Computer Society
    Volume2016-November
    ISBN (Electronic)9781467398978
    DOIs
    Publication statusPublished - 2016 Nov 1
    Event2016 IEEE International Ultrasonics Symposium, IUS 2016 - Tours, France
    Duration: 2016 Sep 182016 Sep 21

    Other

    Other2016 IEEE International Ultrasonics Symposium, IUS 2016
    CountryFrance
    CityTours
    Period16/9/1816/9/21

    Fingerprint

    ingots
    negative ions
    sputtering
    energy distribution
    retarding
    metals
    ions

    Keywords

    • AlN
    • Negative ion
    • ScAlN
    • Sputtering deposition
    • Sputtering target

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    Cite this

    Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2016). Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. In 2016 IEEE International Ultrasonics Symposium, IUS 2016 (Vol. 2016-November). [7728836] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2016.7728836

    Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. / Takayanagi, Shinji; Matsukawa, Mami; Yanagitani, Takahiko.

    2016 IEEE International Ultrasonics Symposium, IUS 2016. Vol. 2016-November IEEE Computer Society, 2016. 7728836.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Takayanagi, S, Matsukawa, M & Yanagitani, T 2016, Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. in 2016 IEEE International Ultrasonics Symposium, IUS 2016. vol. 2016-November, 7728836, IEEE Computer Society, 2016 IEEE International Ultrasonics Symposium, IUS 2016, Tours, France, 16/9/18. https://doi.org/10.1109/ULTSYM.2016.7728836
    Takayanagi S, Matsukawa M, Yanagitani T. Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. In 2016 IEEE International Ultrasonics Symposium, IUS 2016. Vol. 2016-November. IEEE Computer Society. 2016. 7728836 https://doi.org/10.1109/ULTSYM.2016.7728836
    Takayanagi, Shinji ; Matsukawa, Mami ; Yanagitani, Takahiko. / Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. 2016 IEEE International Ultrasonics Symposium, IUS 2016. Vol. 2016-November IEEE Computer Society, 2016.
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    abstract = "ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.",
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