Effects of energetic negative ions generated from sputtering targets on ScAlN film growth

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.

Original languageEnglish
Title of host publication2016 IEEE International Ultrasonics Symposium, IUS 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781467398978
DOIs
Publication statusPublished - 2016 Nov 1
Event2016 IEEE International Ultrasonics Symposium, IUS 2016 - Tours, France
Duration: 2016 Sep 182016 Sep 21

Publication series

NameIEEE International Ultrasonics Symposium, IUS
Volume2016-November
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Other

Other2016 IEEE International Ultrasonics Symposium, IUS 2016
Country/TerritoryFrance
CityTours
Period16/9/1816/9/21

Keywords

  • AlN
  • Negative ion
  • ScAlN
  • Sputtering deposition
  • Sputtering target

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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