Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors

Koichi Yamada, J. Takeya, T. Takenobu, Y. Iwasa

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Abstract

The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n -type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼5× 10-3 cm2 V-1 s-1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.

Original languageEnglish
Article number253311
JournalApplied Physics Letters
Volume92
Issue number25
DOIs
Publication statusPublished - 2008
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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