Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors

The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n -type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼5× 10^-3 cm² V^-1 s^-1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.