Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors

Koichi Yamada, J. Takeya, T. Takenobu, Y. Iwasa

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n -type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼5× 10-3 cm2 V-1 s-1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.

Original languageEnglish
Article number253311
JournalApplied Physics Letters
Volume92
Issue number25
DOIs
Publication statusPublished - 2008
Externally publishedYes

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crystal field theory
transistors
field effect transistors
electrodes
air
single crystals
electron affinity
metals
vacuum
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors. / Yamada, Koichi; Takeya, J.; Takenobu, T.; Iwasa, Y.

In: Applied Physics Letters, Vol. 92, No. 25, 253311, 2008.

Research output: Contribution to journalArticle

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