Abstract
The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n -type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼5× 10-3 cm2 V-1 s-1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.
| Original language | English |
|---|---|
| Article number | 253311 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2008 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors. / Yamada, Koichi; Takeya, J.; Takenobu, T.; Iwasa, Y.
In: Applied Physics Letters, Vol. 92, No. 25, 253311, 2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors
AU - Yamada, Koichi
AU - Takeya, J.
AU - Takenobu, T.
AU - Iwasa, Y.
PY - 2008
Y1 - 2008
N2 - The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n -type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼5× 10-3 cm2 V-1 s-1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.
AB - The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n -type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼5× 10-3 cm2 V-1 s-1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.
UR - http://www.scopus.com/inward/record.url?scp=46049089818&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46049089818&partnerID=8YFLogxK
U2 - 10.1063/1.2953079
DO - 10.1063/1.2953079
M3 - Article
AN - SCOPUS:46049089818
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253311
ER -