Abstract
The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n -type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼5× 10-3 cm2 V-1 s-1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.
Original language | English |
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Article number | 253311 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)