The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.
|Number of pages||3|
|Journal||Solid State Communications|
|Publication status||Published - 1984 Mar|
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry