Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2

Hiroshi Fujimoto, Hajime Ozaki

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

Original languageEnglish
Pages (from-to)1117-1119
Number of pages3
JournalSolid State Communications
Volume49
Issue number12
DOIs
Publication statusPublished - 1984 Mar

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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