Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2

Hiroshi Fujimoto; Hajime Ozaki

doi:10.1016/0038-1098(84)91043-3

Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS₂

Hiroshi Fujimoto^*, Hajime Ozaki

^*Corresponding author for this work

School of Human Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The electrical resistivities of Hf-doped and W-doped 1T-TaS₂ have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

Original language	English
Pages (from-to)	1117-1119
Number of pages	3
Journal	Solid State Communications
Volume	49
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(84)91043-3
Publication status	Published - 1984 Mar

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(84)91043-3

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title = "Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2",

abstract = "The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.",

author = "Hiroshi Fujimoto and Hajime Ozaki",

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AU - Fujimoto, Hiroshi

AU - Ozaki, Hajime

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N2 - The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

AB - The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

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Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS₂

Abstract

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