Effects of indium diffusion on the properties of ZnSe

Mn dc thin-film electroluminescent devices

Masakazu Kobayashi, Naoki Mino, Makoto Konagai, Kiyoshi Takahashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.

Original languageEnglish
Pages (from-to)2905-2908
Number of pages4
JournalJournal of Applied Physics
Volume57
Issue number8
DOIs
Publication statusPublished - 1985
Externally publishedYes

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indium
thin films
oxides
molecular beams
grade
crystallinity
buffers
glass
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of indium diffusion on the properties of ZnSe : Mn dc thin-film electroluminescent devices. / Kobayashi, Masakazu; Mino, Naoki; Konagai, Makoto; Takahashi, Kiyoshi.

In: Journal of Applied Physics, Vol. 57, No. 8, 1985, p. 2905-2908.

Research output: Contribution to journalArticle

Kobayashi, Masakazu ; Mino, Naoki ; Konagai, Makoto ; Takahashi, Kiyoshi. / Effects of indium diffusion on the properties of ZnSe : Mn dc thin-film electroluminescent devices. In: Journal of Applied Physics. 1985 ; Vol. 57, No. 8. pp. 2905-2908.
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