Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices

Masakazu Kobayashi; Naoki Mino; Makoto Konagai; Kiyoshi Takahashi

doi:10.1063/1.335229

Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices

Masakazu Kobayashi^*, Naoki Mino, Makoto Konagai, Kiyoshi Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.

Original language	English
Pages (from-to)	2905-2908
Number of pages	4
Journal	Journal of Applied Physics
Volume	57
Issue number	8
DOIs	https://doi.org/10.1063/1.335229
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices",

abstract = "ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.",

author = "Masakazu Kobayashi and Naoki Mino and Makoto Konagai and Kiyoshi Takahashi",

year = "1985",

doi = "10.1063/1.335229",

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T1 - Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices

AU - Kobayashi, Masakazu

AU - Mino, Naoki

AU - Konagai, Makoto

AU - Takahashi, Kiyoshi

PY - 1985

Y1 - 1985

N2 - ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.

AB - ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices

Abstract

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