Effects of internal postoxidation on the oxygen deficiency and dielectric strength of buried oxide formed by the separation-by-implanted-oxygen (SIMOX) process

Kwang Soo Seol, Hidemi Koike, Tsuyoshi Futami, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    Abstract

    Effects of internal postoxidation on buried silicon dioxide have been studied. The dioxide examined was the buried insulator in a silicon-on-insulator (SOI) structure fabricated by implantation of oxygen ions into Si, or the SIMOX process. Internal postoxidation is an oxidation process applied to the SOI structure after its fabrication. It was observed that the photoluminescence intensity due to neutral oxygen vacancies were also found to increase similarly. The measurements repeatedly done by changing the oxide thickness revealed that the increased part of oxide by the internal oxidation contains the vacancies with a similar density to the original part. It is concluded that the internal oxidation scarcely affects the oxygen deficiency of the oxide. It was also observed that the number of breakdowns at low electric fields remarkably decreased after the internal oxidation, indicating that electrically weak spots such as silicon pipes were effectively reduced.

    Original languageEnglish
    Pages (from-to)15-20
    Number of pages6
    JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
    Volume130
    Issue number1
    DOIs
    Publication statusPublished - 2000 Jan 15

    Fingerprint

    Internal oxidation
    Silicon
    Oxides
    Oxygen
    Oxygen vacancies
    Ion implantation
    Vacancies
    Photoluminescence
    Silica
    Pipe
    Electric fields
    Fabrication
    Oxidation
    Ions

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

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    title = "Effects of internal postoxidation on the oxygen deficiency and dielectric strength of buried oxide formed by the separation-by-implanted-oxygen (SIMOX) process",
    abstract = "Effects of internal postoxidation on buried silicon dioxide have been studied. The dioxide examined was the buried insulator in a silicon-on-insulator (SOI) structure fabricated by implantation of oxygen ions into Si, or the SIMOX process. Internal postoxidation is an oxidation process applied to the SOI structure after its fabrication. It was observed that the photoluminescence intensity due to neutral oxygen vacancies were also found to increase similarly. The measurements repeatedly done by changing the oxide thickness revealed that the increased part of oxide by the internal oxidation contains the vacancies with a similar density to the original part. It is concluded that the internal oxidation scarcely affects the oxygen deficiency of the oxide. It was also observed that the number of breakdowns at low electric fields remarkably decreased after the internal oxidation, indicating that electrically weak spots such as silicon pipes were effectively reduced.",
    author = "Seol, {Kwang Soo} and Hidemi Koike and Tsuyoshi Futami and Yoshimichi Ohki",
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    TY - JOUR

    T1 - Effects of internal postoxidation on the oxygen deficiency and dielectric strength of buried oxide formed by the separation-by-implanted-oxygen (SIMOX) process

    AU - Seol, Kwang Soo

    AU - Koike, Hidemi

    AU - Futami, Tsuyoshi

    AU - Ohki, Yoshimichi

    PY - 2000/1/15

    Y1 - 2000/1/15

    N2 - Effects of internal postoxidation on buried silicon dioxide have been studied. The dioxide examined was the buried insulator in a silicon-on-insulator (SOI) structure fabricated by implantation of oxygen ions into Si, or the SIMOX process. Internal postoxidation is an oxidation process applied to the SOI structure after its fabrication. It was observed that the photoluminescence intensity due to neutral oxygen vacancies were also found to increase similarly. The measurements repeatedly done by changing the oxide thickness revealed that the increased part of oxide by the internal oxidation contains the vacancies with a similar density to the original part. It is concluded that the internal oxidation scarcely affects the oxygen deficiency of the oxide. It was also observed that the number of breakdowns at low electric fields remarkably decreased after the internal oxidation, indicating that electrically weak spots such as silicon pipes were effectively reduced.

    AB - Effects of internal postoxidation on buried silicon dioxide have been studied. The dioxide examined was the buried insulator in a silicon-on-insulator (SOI) structure fabricated by implantation of oxygen ions into Si, or the SIMOX process. Internal postoxidation is an oxidation process applied to the SOI structure after its fabrication. It was observed that the photoluminescence intensity due to neutral oxygen vacancies were also found to increase similarly. The measurements repeatedly done by changing the oxide thickness revealed that the increased part of oxide by the internal oxidation contains the vacancies with a similar density to the original part. It is concluded that the internal oxidation scarcely affects the oxygen deficiency of the oxide. It was also observed that the number of breakdowns at low electric fields remarkably decreased after the internal oxidation, indicating that electrically weak spots such as silicon pipes were effectively reduced.

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