Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films

K. S. Seol, T. Futami, T. Watanabe, Yoshimichi Ohki, M. Takiyama

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si3N4 films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si3N4 films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si3N4.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
    Editors Anon
    Place of PublicationTokyo, Japan
    PublisherInst Elec Eng Japan
    Pages127-130
    Number of pages4
    Publication statusPublished - 1998
    EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
    Duration: 1998 Sep 271998 Sep 30

    Other

    OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
    CityToyohashi, Jpn
    Period98/9/2798/9/30

    Fingerprint

    Amorphous silicon
    Silicon nitride
    Ion implantation
    Photoluminescence
    Annealing
    Hydrogen
    Chemical vapor deposition
    Hot Temperature
    silicon nitride
    Ions
    Defects
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    Cite this

    Seol, K. S., Futami, T., Watanabe, T., Ohki, Y., & Takiyama, M. (1998). Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films. In Anon (Ed.), Proceedings of the International Symposium on Electrical Insulating Materials (pp. 127-130). Tokyo, Japan: Inst Elec Eng Japan.

    Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films. / Seol, K. S.; Futami, T.; Watanabe, T.; Ohki, Yoshimichi; Takiyama, M.

    Proceedings of the International Symposium on Electrical Insulating Materials. ed. / Anon. Tokyo, Japan : Inst Elec Eng Japan, 1998. p. 127-130.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Seol, KS, Futami, T, Watanabe, T, Ohki, Y & Takiyama, M 1998, Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films. in Anon (ed.), Proceedings of the International Symposium on Electrical Insulating Materials. Inst Elec Eng Japan, Tokyo, Japan, pp. 127-130, Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, 98/9/27.
    Seol KS, Futami T, Watanabe T, Ohki Y, Takiyama M. Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films. In Anon, editor, Proceedings of the International Symposium on Electrical Insulating Materials. Tokyo, Japan: Inst Elec Eng Japan. 1998. p. 127-130
    Seol, K. S. ; Futami, T. ; Watanabe, T. ; Ohki, Yoshimichi ; Takiyama, M. / Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films. Proceedings of the International Symposium on Electrical Insulating Materials. editor / Anon. Tokyo, Japan : Inst Elec Eng Japan, 1998. pp. 127-130
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    AU - Seol, K. S.

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    AU - Takiyama, M.

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    AB - The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si3N4 films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si3N4 films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si3N4.

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