Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films

K. S. Seol, T. Futami, T. Watanabe, Y. Ohki, M. Takiyama

Research output: Contribution to conferencePaper

Abstract

The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si3N4 films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si3N4 films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si3N4.

Original languageEnglish
Pages127-130
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Duration: 1998 Sep 271998 Sep 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

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ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Seol, K. S., Futami, T., Watanabe, T., Ohki, Y., & Takiyama, M. (1998). Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films. 127-130. Paper presented at Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, .