Abstract
The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.
| Original language | English |
|---|---|
| Pages (from-to) | 6746-6750 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 85 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1999 May 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Seol, K. S., Futami, T., Watanabe, T., Ohki, Y., & Takiyama, M. (1999). Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride. Journal of Applied Physics, 85(9), 6746-6750. https://doi.org/10.1063/1.370188