Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

Kwang Soo Seol; Tsuyoshi Futami; Takashi Watanabe; Yoshimichi Ohki; Makoto Takiyama

doi:10.1063/1.370188

Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

Kwang Soo Seol, Tsuyoshi Futami, Takashi Watanabe, Yoshimichi Ohki, Makoto Takiyama

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiN_x) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.

Original language	English
Pages (from-to)	6746-6750
Number of pages	5
Journal	Journal of Applied Physics
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.370188
Publication status	Published - 1999 May 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{67374697423243eab1ef83212c1115cd,

title = "Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride",

abstract = "The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.",

author = "Seol, {Kwang Soo} and Tsuyoshi Futami and Takashi Watanabe and Yoshimichi Ohki and Makoto Takiyama",

year = "1999",

month = may,

day = "1",

doi = "10.1063/1.370188",

language = "English",

volume = "85",

pages = "6746--6750",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

AU - Seol, Kwang Soo

AU - Futami, Tsuyoshi

AU - Watanabe, Takashi

AU - Ohki, Yoshimichi

AU - Takiyama, Makoto

PY - 1999/5/1

Y1 - 1999/5/1

N2 - The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.

AB - The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.

UR - http://www.scopus.com/inward/record.url?scp=0032607436&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032607436&partnerID=8YFLogxK

U2 - 10.1063/1.370188

DO - 10.1063/1.370188

M3 - Article

AN - SCOPUS:0032607436

VL - 85

SP - 6746

EP - 6750

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -

Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

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