Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

Kwang Soo Seol, Tsuyoshi Futami, Takashi Watanabe, Yoshimichi Ohki, Makoto Takiyama

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.

    Original languageEnglish
    Pages (from-to)6746-6750
    Number of pages5
    JournalJournal of Applied Physics
    Volume85
    Issue number9
    Publication statusPublished - 1999 May 1

    Fingerprint

    silicon nitrides
    amorphous silicon
    ion implantation
    photoluminescence
    annealing
    implantation
    low pressure
    vapor deposition
    defects
    hydrogen
    ions

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride. / Seol, Kwang Soo; Futami, Tsuyoshi; Watanabe, Takashi; Ohki, Yoshimichi; Takiyama, Makoto.

    In: Journal of Applied Physics, Vol. 85, No. 9, 01.05.1999, p. 6746-6750.

    Research output: Contribution to journalArticle

    Seol, Kwang Soo ; Futami, Tsuyoshi ; Watanabe, Takashi ; Ohki, Yoshimichi ; Takiyama, Makoto. / Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 9. pp. 6746-6750.
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    abstract = "The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.",
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    AU - Ohki, Yoshimichi

    AU - Takiyama, Makoto

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