Effects of ion implantation on oxygen vacancies in YSZ

Yasuhiro Kuroda, Takaaki Morimoto, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    Abstract

    Photoluminescence (PL) due to oxygen vacancies appearing in yttria-stabilized zirconia (YSZ) decreases clearly by ion implantation in both bulky single crystal plates and thin multicrystal films. This indicates that segregation into Y2O3 and ZrO2 and change in charging state of oxygen vacancy occur similarly in the two substances despite big differences in their thicknesses and morphologies.

    Original languageEnglish
    Pages (from-to)592-593
    Number of pages2
    JournalIEEJ Transactions on Fundamentals and Materials
    Volume136
    Issue number9
    DOIs
    Publication statusPublished - 2016

    Fingerprint

    Yttria stabilized zirconia
    Oxygen vacancies
    Ion implantation
    Photoluminescence
    Single crystals
    Thin films

    Keywords

    • Ion implantation
    • Oxygen vacancy
    • Photoluminescence
    • Visible-uv absorption
    • Yttria-stabilized zirconia

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Effects of ion implantation on oxygen vacancies in YSZ. / Kuroda, Yasuhiro; Morimoto, Takaaki; Ohki, Yoshimichi.

    In: IEEJ Transactions on Fundamentals and Materials, Vol. 136, No. 9, 2016, p. 592-593.

    Research output: Contribution to journalArticle

    Kuroda, Yasuhiro ; Morimoto, Takaaki ; Ohki, Yoshimichi. / Effects of ion implantation on oxygen vacancies in YSZ. In: IEEJ Transactions on Fundamentals and Materials. 2016 ; Vol. 136, No. 9. pp. 592-593.
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