Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches

Tohru Tsuruoka, Kazuya Terabe, Tsuyoshi Hasegawa, Ilia Valov, Rainer Waser, Masakazu Aono

Research output: Contribution to journalArticle

153 Citations (Scopus)

Abstract

Resistive switching memories based on the formation and dissolution of a metal filament in a simple metal/oxide/metal structure are attractive because of their potential high scalability, low-power consumption, and ease of operation. From the standpoint of the operation mechanism, these types of memory devices are referred to as gapless-type atomic switches or electrochemical metallization cells. It is well known that oxide materials can absorb moisture from the ambient air, which causes shifts in the characteristics of metal-oxide- semiconductor devices. However, the role of ambient moisture on the operation of oxide-based atomic switches has not yet been clarified. In this work, current-voltage measurements were performed as a function of ambient water vapor pressure and temperature to reveal the effect of moisture on the switching behavior of Cu/oxide/Pt atomic switches using different oxide materials. The main findings are: i) the ionization of Cu at the anode interface is likely to be attributed to chemical oxidation via residual water in the oxide layer, ii) Cu ions migrate along grain boundaries in the oxide layer, where a hydrogen-bond network might be formed by moisture absorption, and iii) the stability of residual water has an impact on the ionization and migration processes and plays a major role in determining the operation voltages. These findings will be important in the microscopic understanding of the switching behavior of oxide-based atomic switches and electrochemical metallization cells.

Original languageEnglish
Pages (from-to)70-77
Number of pages8
JournalAdvanced Functional Materials
Volume22
Issue number1
DOIs
Publication statusPublished - 2012 Jan 11
Externally publishedYes

Fingerprint

moisture
Oxides
Moisture
switches
Switches
oxides
electrochemical cells
Metals
Metallizing
Ionization
ionization
water pressure
Data storage equipment
MOS devices
Water
semiconductor devices
Voltage measurement
metal oxide semiconductors
Steam
metals

Keywords

  • electrochemical metallization cell
  • gapless-type atomic switches
  • moisture
  • nanoionics
  • oxides

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches. / Tsuruoka, Tohru; Terabe, Kazuya; Hasegawa, Tsuyoshi; Valov, Ilia; Waser, Rainer; Aono, Masakazu.

In: Advanced Functional Materials, Vol. 22, No. 1, 11.01.2012, p. 70-77.

Research output: Contribution to journalArticle

Tsuruoka, Tohru ; Terabe, Kazuya ; Hasegawa, Tsuyoshi ; Valov, Ilia ; Waser, Rainer ; Aono, Masakazu. / Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches. In: Advanced Functional Materials. 2012 ; Vol. 22, No. 1. pp. 70-77.
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