Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties

T. Kuroi, S. Kusunoki, M. Shirahata, Y. Okumura, M. Kobayashi, Masahide Inuishi, N. Tsubouchi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

Original languageEnglish
Pages (from-to)107-108
Number of pages2
JournalUnknown Journal
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

implantation
Oxide films
Nitrogen
nitrogen
Silicon
Oxides
oxides
silicon
Boron
oxide films
Hot carriers
Interface states
boron
Fluorine
carrier injection
Atoms
fluorine
penetration
traps
atoms

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kuroi, T., Kusunoki, S., Shirahata, M., Okumura, Y., Kobayashi, M., Inuishi, M., & Tsubouchi, N. (1994). Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties. Unknown Journal, 107-108.

Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties. / Kuroi, T.; Kusunoki, S.; Shirahata, M.; Okumura, Y.; Kobayashi, M.; Inuishi, Masahide; Tsubouchi, N.

In: Unknown Journal, 1994, p. 107-108.

Research output: Contribution to journalArticle

Kuroi, T, Kusunoki, S, Shirahata, M, Okumura, Y, Kobayashi, M, Inuishi, M & Tsubouchi, N 1994, 'Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties', Unknown Journal, pp. 107-108.
Kuroi T, Kusunoki S, Shirahata M, Okumura Y, Kobayashi M, Inuishi M et al. Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties. Unknown Journal. 1994;107-108.
Kuroi, T. ; Kusunoki, S. ; Shirahata, M. ; Okumura, Y. ; Kobayashi, M. ; Inuishi, Masahide ; Tsubouchi, N. / Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties. In: Unknown Journal. 1994 ; pp. 107-108.
@article{376a6db5bb724ab395e0fd3bf6ae5952,
title = "Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties",
abstract = "We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.",
author = "T. Kuroi and S. Kusunoki and M. Shirahata and Y. Okumura and M. Kobayashi and Masahide Inuishi and N. Tsubouchi",
year = "1994",
language = "English",
pages = "107--108",
journal = "Nuclear Physics A",
issn = "0375-9474",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties

AU - Kuroi, T.

AU - Kusunoki, S.

AU - Shirahata, M.

AU - Okumura, Y.

AU - Kobayashi, M.

AU - Inuishi, Masahide

AU - Tsubouchi, N.

PY - 1994

Y1 - 1994

N2 - We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

AB - We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

UR - http://www.scopus.com/inward/record.url?scp=0028554605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028554605&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0028554605

SP - 107

EP - 108

JO - Nuclear Physics A

JF - Nuclear Physics A

SN - 0375-9474

ER -