Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties

T. Kuroi, S. Kusunoki, M. Shirahata, Y. Okumura, M. Kobayashi, M. Inuishi, N. Tsubouchi

Research output: Contribution to journalConference article

23 Citations (Scopus)

Abstract

We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

Original languageEnglish
Pages (from-to)107-108
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1994 Dec 1
Externally publishedYes
EventProceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1994 Jun 71994 Jun 9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effects of nitrogen implantation into P<sup>+</sup> poly-silicon gate on gate oxide properties'. Together they form a unique fingerprint.

  • Cite this

    Kuroi, T., Kusunoki, S., Shirahata, M., Okumura, Y., Kobayashi, M., Inuishi, M., & Tsubouchi, N. (1994). Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties. Digest of Technical Papers - Symposium on VLSI Technology, 107-108.