Effects of nonradiative centers on localized excitons in InGaN quantum well structures

H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, Toshiki Makimoto, H. Nakano

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.

Original languageEnglish
Article number222110
JournalApplied Physics Letters
Volume89
Issue number22
DOIs
Publication statusPublished - 2006
Externally publishedYes

Fingerprint

excitons
quantum wells
indium
quantum dots

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of nonradiative centers on localized excitons in InGaN quantum well structures. / Gotoh, H.; Akasaka, T.; Tawara, T.; Kobayashi, Y.; Makimoto, Toshiki; Nakano, H.

In: Applied Physics Letters, Vol. 89, No. 22, 222110, 2006.

Research output: Contribution to journalArticle

Gotoh, H. ; Akasaka, T. ; Tawara, T. ; Kobayashi, Y. ; Makimoto, Toshiki ; Nakano, H. / Effects of nonradiative centers on localized excitons in InGaN quantum well structures. In: Applied Physics Letters. 2006 ; Vol. 89, No. 22.
@article{7784a1b334ae4005b15937b1a982a3e2,
title = "Effects of nonradiative centers on localized excitons in InGaN quantum well structures",
abstract = "The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.",
author = "H. Gotoh and T. Akasaka and T. Tawara and Y. Kobayashi and Toshiki Makimoto and H. Nakano",
year = "2006",
doi = "10.1063/1.2399347",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Effects of nonradiative centers on localized excitons in InGaN quantum well structures

AU - Gotoh, H.

AU - Akasaka, T.

AU - Tawara, T.

AU - Kobayashi, Y.

AU - Makimoto, Toshiki

AU - Nakano, H.

PY - 2006

Y1 - 2006

N2 - The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.

AB - The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.

UR - http://www.scopus.com/inward/record.url?scp=33751570747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751570747&partnerID=8YFLogxK

U2 - 10.1063/1.2399347

DO - 10.1063/1.2399347

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222110

ER -