Effects of nonradiative centers on localized excitons in InGaN quantum well structures

H. Gotoh; T. Akasaka; T. Tawara; Y. Kobayashi; T. Makimoto; H. Nakano

doi:10.1063/1.2399347

Effects of nonradiative centers on localized excitons in InGaN quantum well structures

H. Gotoh^*, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, H. Nakano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.

Original language	English
Article number	222110
Journal	Applied Physics Letters
Volume	89
Issue number	22
DOIs	https://doi.org/10.1063/1.2399347
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effects of nonradiative centers on localized excitons in InGaN quantum well structures",

abstract = "The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.",

author = "H. Gotoh and T. Akasaka and T. Tawara and Y. Kobayashi and T. Makimoto and H. Nakano",

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doi = "10.1063/1.2399347",

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journal = "Applied Physics Letters",

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T1 - Effects of nonradiative centers on localized excitons in InGaN quantum well structures

AU - Gotoh, H.

AU - Akasaka, T.

AU - Tawara, T.

AU - Kobayashi, Y.

AU - Makimoto, T.

AU - Nakano, H.

PY - 2006

Y1 - 2006

N2 - The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.

AB - The authors report the effects of nonradiative recombination on the properties of spatially localized excitons in InGaN quantum well structures studied using a microphotoluminescence (PL) technique. Sharp PL lines (linewidth of less than 1 meV) are clearly obtained by combining the PL and nanolithographic techniques. The PL originates from localized excitons induced by quantum-dot-like local potential minima where indium is accumulated. A systematic study with various kinds of samples reveals that suppressing the density of the nonradiative centers is crucially important in terms of observing the exciton localization effects rather than increasing the effects of indium accumulation.

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DO - 10.1063/1.2399347

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

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ER -

Effects of nonradiative centers on localized excitons in InGaN quantum well structures

Abstract

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