Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei, Hiroshi Kawarada, Jun ichi Suzuki, Jing Shing Ma, Akio Hiraki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high-quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

Original languageEnglish
Pages (from-to)1279-1280
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume30
Issue number6
Publication statusPublished - 1991 Jun
Externally publishedYes

Fingerprint

plasma potentials
Chemical vapor deposition
Diamonds
low pressure
diamonds
Microwaves
vapor deposition
Plasmas
microwaves
diamond films
electron diffraction
Raman spectroscopy
electron microscopes
fabrication
scanning
Diamond films
Electron diffraction
spectroscopy
Electron microscopes
Scanning

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition. / Wei, Jin; Kawarada, Hiroshi; Suzuki, Jun ichi; Ma, Jing Shing; Hiraki, Akio.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 30, No. 6, 06.1991, p. 1279-1280.

Research output: Contribution to journalArticle

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