Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei, Hiroshi Kawarada, Jun ichi Suzuki, Jing Shing Ma, Akio Hiraki

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At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high-quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

Original languageEnglish
Pages (from-to)1279-1280
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6
Publication statusPublished - 1991 Jun
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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