Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei, Hiroshi Kawarada, Jun Ichi Suzuki, Jing Shing Ma, Akio Hiraki

    Research output: Contribution to journalArticle

    Abstract

    At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high- quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

    Original languageEnglish
    Pages (from-to)L279-L280
    JournalJapanese Journal of Applied Physics
    Volume30
    Issue number6 R
    DOIs
    Publication statusPublished - 1991

    Fingerprint

    plasma potentials
    Chemical vapor deposition
    Diamonds
    low pressure
    diamonds
    Microwaves
    vapor deposition
    Plasmas
    microwaves
    diamond films
    electron diffraction
    Raman spectroscopy
    electron microscopes
    fabrication
    scanning
    Diamond films
    Electron diffraction
    spectroscopy
    Electron microscopes
    Scanning

    Keywords

    • Cvd
    • Diamond film
    • Ecr
    • Plasma potential
    • Potential difference

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition. / Wei, Jin; Kawarada, Hiroshi; Suzuki, Jun Ichi; Ma, Jing Shing; Hiraki, Akio.

    In: Japanese Journal of Applied Physics, Vol. 30, No. 6 R, 1991, p. L279-L280.

    Research output: Contribution to journalArticle

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    author = "Jin Wei and Hiroshi Kawarada and Suzuki, {Jun Ichi} and Ma, {Jing Shing} and Akio Hiraki",
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    AU - Hiraki, Akio

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