Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei, Hiroshi Kawarada, Jun Ichi Suzuki, Jing Shing Ma, Akio Hiraki

Research output: Contribution to journalArticle

Abstract

At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high- quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

Original languageEnglish
Pages (from-to)L279-L280
JournalJapanese journal of applied physics
Volume30
Issue number6 R
DOIs
Publication statusPublished - 1991 Jun

Keywords

  • Cvd
  • Diamond film
  • Ecr
  • Plasma potential
  • Potential difference

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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