Effects of strain on carrier recombination in GaN quantum dots

A. Neogi; H. O. Everitt; H. Morkoç; T. Kuroda; A. Tackeuchi

Effects of strain on carrier recombination in GaN quantum dots

A. Neogi^*, H. O. Everitt, H. Morkoç, T. Kuroda, A. Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

Original language	English
Pages	QWA16/1-QWA16/2
Publication status	Published - 2003 Dec 1
Event	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States Duration: 2003 Jun 1 → 2003 Jun 6

Conference

Conference	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
Country/Territory	United States
City	Baltimore, MD.
Period	03/6/1 → 03/6/6

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

@conference{818a36750eaf49ca805b3d465163a964,

title = "Effects of strain on carrier recombination in GaN quantum dots",

abstract = "Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.",

author = "A. Neogi and Everitt, {H. O.} and H. Morko{\c c} and T. Kuroda and A. Tackeuchi",

year = "2003",

month = dec,

day = "1",

language = "English",

pages = "QWA16/1--QWA16/2",

note = "Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) ; Conference date: 01-06-2003 Through 06-06-2003",

}

TY - CONF

T1 - Effects of strain on carrier recombination in GaN quantum dots

AU - Neogi, A.

AU - Everitt, H. O.

AU - Morkoç, H.

AU - Kuroda, T.

AU - Tackeuchi, A.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

AB - Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=1542397995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542397995&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1542397995

SP - QWA16/1-QWA16/2

T2 - Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)

Y2 - 1 June 2003 through 6 June 2003

ER -

Effects of strain on carrier recombination in GaN quantum dots

Abstract

Conference

ASJC Scopus subject areas

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