Effects of strain on carrier recombination in GaN quantum dots

A. Neogi, H. O. Everitt, H. Morkoç, T. Kuroda, Atsushi Tackeuchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

    Original languageEnglish
    Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
    Volume89
    Publication statusPublished - 2003
    EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD.
    Duration: 2003 Jun 12003 Jun 6

    Other

    OtherTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
    CityBaltimore, MD.
    Period03/6/103/6/6

    Fingerprint

    quantum dots
    radiative recombination
    photoluminescence
    room temperature
    spectroscopy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Neogi, A., Everitt, H. O., Morkoç, H., Kuroda, T., & Tackeuchi, A. (2003). Effects of strain on carrier recombination in GaN quantum dots. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (Vol. 89)

    Effects of strain on carrier recombination in GaN quantum dots. / Neogi, A.; Everitt, H. O.; Morkoç, H.; Kuroda, T.; Tackeuchi, Atsushi.

    Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 89 2003.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Neogi, A, Everitt, HO, Morkoç, H, Kuroda, T & Tackeuchi, A 2003, Effects of strain on carrier recombination in GaN quantum dots. in Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. vol. 89, Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., 03/6/1.
    Neogi A, Everitt HO, Morkoç H, Kuroda T, Tackeuchi A. Effects of strain on carrier recombination in GaN quantum dots. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 89. 2003
    Neogi, A. ; Everitt, H. O. ; Morkoç, H. ; Kuroda, T. ; Tackeuchi, Atsushi. / Effects of strain on carrier recombination in GaN quantum dots. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 89 2003.
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    abstract = "Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.",
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    AU - Tackeuchi, Atsushi

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