Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.
|Publication status||Published - 2003 Dec 1|
|Event||Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States|
Duration: 2003 Jun 1 → 2003 Jun 6
|Conference||Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)|
|Period||03/6/1 → 03/6/6|
ASJC Scopus subject areas
- Physics and Astronomy(all)