Effects of strain on carrier recombination in GaN quantum dots

A. Neogi, H. O. Everitt, H. Morkoç, T. Kuroda, A. Tackeuchi

Research output: Contribution to conferencePaperpeer-review

Abstract

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

Original languageEnglish
PagesQWA16/1-QWA16/2
Publication statusPublished - 2003 Dec 1
EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
Duration: 2003 Jun 12003 Jun 6

Conference

ConferenceTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
CountryUnited States
CityBaltimore, MD.
Period03/6/103/6/6

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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